Nitride-based blue LEDs with GaN/SiN double buffer layers

Cheng-Huang Kuo, S. J. Chang*, Y. K. Su, C. K. Wang, L. W. Wu, J. K. Sheu, T. C. Wen, W. C. Lai, J. M. Tsai, C. C. Lin

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

22 Scopus citations


GaN epitaxial layers and nitride-based multiquantum well light emitting diode (LED) structures with conventional single GaN buffer and GaN/SiN double buffers were prepared by metalorganic chemical vapor deposition. It was found that we could reduce defect density and thus improve crystal quality of the GaN epitaxial layers by using GaN/SiN double buffers. It was also found that we could use such a GaN/SiN double buffer to achieve more reliable nitride-based LEDs.

Original languageEnglish
Pages (from-to)2019-2022
Number of pages4
JournalSolid-State Electronics
Issue number11
StatePublished - Nov 2003


  • Buffer
  • LED
  • Life time
  • SiN


Dive into the research topics of 'Nitride-based blue LEDs with GaN/SiN double buffer layers'. Together they form a unique fingerprint.

Cite this