Nitride-based asymmetric two-step light-emitting diode with In 0.08Ga0.92N shallow step

Cheng-Huang Kuo*, Y. K. Fu, C. L. Yeh, C. J. Tun, P. H. Chen, Wei Chih Lai, Shoou Jinn Chang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

A nitride-based asymmetric two-step light-emitting diode (LED) with In 0.08Ga0.92N shallow step was proposed and fabricated. It was found that the low indium content In0.08Ga0.92N layer can significantly enhance phase separation and/or inhomogeneous indium distribution in the active In0.27Ga0.73N layer. It was also found that we can enhance LED output power by a factor of 2.27 by simply inserting an In0.08Ga0.92N shallow step.

Original languageEnglish
Pages (from-to)371-373
Number of pages3
JournalIEEE Photonics Technology Letters
Volume21
Issue number6
DOIs
StatePublished - 15 Mar 2009

Keywords

  • InGaN-GaN
  • Light-emitting diode (LED)
  • Low indium composition
  • Single-quantum-well (SQW)

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