Nitridation of the Stacked Poly-Si Gate to Suppress the Boron Penetration in pMOS

Yung Hao Lin; Chao Sung Lai; Chung Len Lee; Tan Fu Lei; Tien-Sheng Chao

doi:10.1109/55.790724

Nitridation of the Stacked Poly-Si Gate to Suppress the Boron Penetration in pMOS

Yung Hao Lin, Chao Sung Lai, Chung Len Lee, Tan Fu Lei, Tien-Sheng Chao

Department of Electrophysics

Research output: Contribution to journal › Article › peer-review

10 Scopus citations

Abstract

Nitridation to create nitrogen-rich layers in-between the stacked layers of the poly-Si gate to suppress the boron penetration for pMOS with the gate BF 2+ -implantation is proposed and demonstrated. The MOS capacitors fabricated by using this nitridized stacked poly-Si gate have better thermal stability and much improved electrical characteristics.

Original language	English
Pages (from-to)	248-249
Number of pages	2
Journal	Ieee Electron Device Letters
Volume	16
Issue number	6
DOIs	https://doi.org/10.1109/55.790724
State	Published - Jun 1995

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title = "Nitridation of the Stacked Poly-Si Gate to Suppress the Boron Penetration in pMOS",

abstract = "Nitridation to create nitrogen-rich layers in-between the stacked layers of the poly-Si gate to suppress the boron penetration for pMOS with the gate BF 2+ -implantation is proposed and demonstrated. The MOS capacitors fabricated by using this nitridized stacked poly-Si gate have better thermal stability and much improved electrical characteristics.",

author = "Lin, \{Yung Hao\} and Lai, \{Chao Sung\} and Lee, \{Chung Len\} and Lei, \{Tan Fu\} and Tien-Sheng Chao",

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AU - Lin, Yung Hao

AU - Lai, Chao Sung

AU - Lee, Chung Len

AU - Lei, Tan Fu

AU - Chao, Tien-Sheng

PY - 1995/6

Y1 - 1995/6

N2 - Nitridation to create nitrogen-rich layers in-between the stacked layers of the poly-Si gate to suppress the boron penetration for pMOS with the gate BF 2+ -implantation is proposed and demonstrated. The MOS capacitors fabricated by using this nitridized stacked poly-Si gate have better thermal stability and much improved electrical characteristics.

AB - Nitridation to create nitrogen-rich layers in-between the stacked layers of the poly-Si gate to suppress the boron penetration for pMOS with the gate BF 2+ -implantation is proposed and demonstrated. The MOS capacitors fabricated by using this nitridized stacked poly-Si gate have better thermal stability and much improved electrical characteristics.

UR - https://www.scopus.com/pages/publications/0029324282

U2 - 10.1109/55.790724

DO - 10.1109/55.790724

M3 - Article

AN - SCOPUS:0029324282

SN - 0741-3106

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SP - 248

EP - 249

JO - Ieee Electron Device Letters

JF - Ieee Electron Device Letters

IS - 6

ER -

Nitridation of the Stacked Poly-Si Gate to Suppress the Boron Penetration in pMOS

Abstract

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