Nitridation of the Stacked Poly-Si Gate to Suppress the Boron Penetration in pMOS

Yung Hao Lin; Chao Sung Lai; Chung Len Lee; Tan Fu Lei; Tien-Sheng Chao

doi:10.1109/55.790724

Nitridation of the Stacked Poly-Si Gate to Suppress the Boron Penetration in pMOS

Yung Hao Lin, Chao Sung Lai, Chung Len Lee, Tan Fu Lei, Tien-Sheng Chao

Department of Electrophysics

Research output: Contribution to journal › Article › peer-review

10 Scopus citations

Abstract

Nitridation to create nitrogen-rich layers in-between the stacked layers of the poly-Si gate to suppress the boron penetration for pMOS with the gate BF 2+ -implantation is proposed and demonstrated. The MOS capacitors fabricated by using this nitridized stacked poly-Si gate have better thermal stability and much improved electrical characteristics.

Original language	English
Pages (from-to)	248-249
Number of pages	2
Journal	IEEE Electron Device Letters
Volume	16
Issue number	6
DOIs	https://doi.org/10.1109/55.790724
State	Published - 1 Jan 1995

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@article{76d7777f5c8345b7b48063fe9f89622f,

title = "Nitridation of the Stacked Poly-Si Gate to Suppress the Boron Penetration in pMOS",

abstract = "Nitridation to create nitrogen-rich layers in-between the stacked layers of the poly-Si gate to suppress the boron penetration for pMOS with the gate BF 2+ -implantation is proposed and demonstrated. The MOS capacitors fabricated by using this nitridized stacked poly-Si gate have better thermal stability and much improved electrical characteristics.",

author = "Lin, {Yung Hao} and Lai, {Chao Sung} and Lee, {Chung Len} and Lei, {Tan Fu} and Tien-Sheng Chao",

year = "1995",

month = jan,

day = "1",

doi = "10.1109/55.790724",

language = "English",

volume = "16",

pages = "248--249",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "6",

}

TY - JOUR

T1 - Nitridation of the Stacked Poly-Si Gate to Suppress the Boron Penetration in pMOS

AU - Lin, Yung Hao

AU - Lai, Chao Sung

AU - Lee, Chung Len

AU - Lei, Tan Fu

AU - Chao, Tien-Sheng

PY - 1995/1/1

Y1 - 1995/1/1

N2 - Nitridation to create nitrogen-rich layers in-between the stacked layers of the poly-Si gate to suppress the boron penetration for pMOS with the gate BF 2+ -implantation is proposed and demonstrated. The MOS capacitors fabricated by using this nitridized stacked poly-Si gate have better thermal stability and much improved electrical characteristics.

AB - Nitridation to create nitrogen-rich layers in-between the stacked layers of the poly-Si gate to suppress the boron penetration for pMOS with the gate BF 2+ -implantation is proposed and demonstrated. The MOS capacitors fabricated by using this nitridized stacked poly-Si gate have better thermal stability and much improved electrical characteristics.

UR - http://www.scopus.com/inward/record.url?scp=0029324282&partnerID=8YFLogxK

U2 - 10.1109/55.790724

DO - 10.1109/55.790724

M3 - Article

AN - SCOPUS:0029324282

SN - 0741-3106

VL - 16

SP - 248

EP - 249

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 6

ER -

Nitridation of the Stacked Poly-Si Gate to Suppress the Boron Penetration in pMOS

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