Nitridation to create nitrogen-rich layers in-between the stacked layers of the poly-Si gate to suppress the boron penetration for pMOS with the gate BF 2+ -implantation is proposed and demonstrated. The MOS capacitors fabricated by using this nitridized stacked poly-Si gate have better thermal stability and much improved electrical characteristics.
|Number of pages||2|
|Journal||IEEE Electron Device Letters|
|State||Published - 1 Jan 1995|