Next generation CMOS compact models for RF and microwave applications

Ali M. Niknejad*, Chinh Doan, Sohrab Emami, Mohan Dunga, Xuemei Xi, Jin He, Robert Brodersen, Chen-Ming Hu

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

6 Scopus citations

Abstract

Commercial CMOS chips routinely operate at frequencies up to 5 GHz and exciting new opportunities exists in higher frequency bands such as 3-10 GHz, 17 GHz, 24 GHz, and 60 GHz. The Berkeley Wireless Research Center has demonstrated that standard 130nm CMOS technology is capable of operation up to 60 GHz, enabling a host of new mm-wave applications such as Gb/s WLAN and compact radar imaging. Will circuit design and compact modeling continue along the same course, or is a new microwave design methodology required? This paper will highlight the design and modeling challenges in moving up to these higher frequencies. A merger of RF and microwave design perspectives will be used to offer insight into the problem. The paper will discuss requirements for a next generation compact model to meet these challenges and offer potential solutions.

Original languageEnglish
Article numberRMO2C-1
Pages (from-to)141-144
Number of pages4
JournalDigest of papers - IEEE Radio Frequency Integrated Circuits Symposium
DOIs
StatePublished - 2005
Event2005 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium - Digest of Papers - Long Beach, CA, United States
Duration: 12 Jun 200514 Jun 2005

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