New polymer-capped a-IGZO TFT with high sensitivity to visible light for the development of integrated touch sensor array

Hsiao-Wen Zan; Hsiu Wen Hsueh; Shih Chin Kao; Wei Tsung Chen; Ming Che Ku; Wu Wei Tsai; Chuang Chuang Tsai; Hsin-Fei Meng

doi:10.1889/1.3499931

New polymer-capped a-IGZO TFT with high sensitivity to visible light for the development of integrated touch sensor array

Hsiao-Wen Zan^*, Hsiu Wen Hsueh, Shih Chin Kao, Wei Tsung Chen, Ming Che Ku, Wu Wei Tsai, Chuang Chuang Tsai, Hsin-Fei Meng

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

8 Scopus citations

Abstract

We deposit a polymer layer (P3HT) on top of a-IGZO thin-film transistor (TFT) to absorbed visible light. Under white light, photoresponsivity of P3HT-capped device is about 30 times of that of standard device. These results are important for the development of in-cell integrated touch sensor in a -IGZO TFT array.

Original language	English
Title of host publication	48th Annual SID Symposium, Seminar, and Exhibition 2010, Display Week 2010
Pages	1316-1318
Number of pages	3
Volume	41
Edition	1
DOIs	https://doi.org/10.1889/1.3499931
State	Published - May 2010

Publication series

Name	48th Annual SID Symposium, Seminar, and Exhibition 2010, Display Week 2010

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Zan, H.-W., Hsueh, H. W., Kao, S. C., Chen, W. T., Ku, M. C., Tsai, W. W., Tsai, C. C., & Meng, H.-F. (2010). New polymer-capped a-IGZO TFT with high sensitivity to visible light for the development of integrated touch sensor array. In 48th Annual SID Symposium, Seminar, and Exhibition 2010, Display Week 2010 (1 ed., Vol. 41, pp. 1316-1318). (48th Annual SID Symposium, Seminar, and Exhibition 2010, Display Week 2010). https://doi.org/10.1889/1.3499931

Zan, Hsiao-Wen ; Hsueh, Hsiu Wen ; Kao, Shih Chin et al. / New polymer-capped a-IGZO TFT with high sensitivity to visible light for the development of integrated touch sensor array. 48th Annual SID Symposium, Seminar, and Exhibition 2010, Display Week 2010. Vol. 41 1. ed. 2010. pp. 1316-1318 (48th Annual SID Symposium, Seminar, and Exhibition 2010, Display Week 2010).

@inproceedings{fb4fd125176b408b838b9626f6f0a024,

title = "New polymer-capped a-IGZO TFT with high sensitivity to visible light for the development of integrated touch sensor array",

abstract = "We deposit a polymer layer (P3HT) on top of a-IGZO thin-film transistor (TFT) to absorbed visible light. Under white light, photoresponsivity of P3HT-capped device is about 30 times of that of standard device. These results are important for the development of in-cell integrated touch sensor in a -IGZO TFT array.",

author = "Hsiao-Wen Zan and Hsueh, {Hsiu Wen} and Kao, {Shih Chin} and Chen, {Wei Tsung} and Ku, {Ming Che} and Tsai, {Wu Wei} and Tsai, {Chuang Chuang} and Hsin-Fei Meng",

year = "2010",

month = may,

doi = "10.1889/1.3499931",

language = "English",

volume = "41",

series = "48th Annual SID Symposium, Seminar, and Exhibition 2010, Display Week 2010",

pages = "1316--1318",

booktitle = "48th Annual SID Symposium, Seminar, and Exhibition 2010, Display Week 2010",

edition = "1",

}

Zan, H-W, Hsueh, HW, Kao, SC, Chen, WT, Ku, MC, Tsai, WW, Tsai, CC & Meng, H-F 2010, New polymer-capped a-IGZO TFT with high sensitivity to visible light for the development of integrated touch sensor array. in 48th Annual SID Symposium, Seminar, and Exhibition 2010, Display Week 2010. 1 edn, vol. 41, 48th Annual SID Symposium, Seminar, and Exhibition 2010, Display Week 2010, pp. 1316-1318. https://doi.org/10.1889/1.3499931

New polymer-capped a-IGZO TFT with high sensitivity to visible light for the development of integrated touch sensor array. / Zan, Hsiao-Wen; Hsueh, Hsiu Wen; Kao, Shih Chin et al.
48th Annual SID Symposium, Seminar, and Exhibition 2010, Display Week 2010. Vol. 41 1. ed. 2010. p. 1316-1318 (48th Annual SID Symposium, Seminar, and Exhibition 2010, Display Week 2010).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Zan, Hsiao-Wen

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AU - Chen, Wei Tsung

AU - Ku, Ming Che

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AU - Tsai, Chuang Chuang

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AB - We deposit a polymer layer (P3HT) on top of a-IGZO thin-film transistor (TFT) to absorbed visible light. Under white light, photoresponsivity of P3HT-capped device is about 30 times of that of standard device. These results are important for the development of in-cell integrated touch sensor in a -IGZO TFT array.

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Zan HW, Hsueh HW, Kao SC, Chen WT, Ku MC, Tsai WW et al. New polymer-capped a-IGZO TFT with high sensitivity to visible light for the development of integrated touch sensor array. In 48th Annual SID Symposium, Seminar, and Exhibition 2010, Display Week 2010. 1 ed. Vol. 41. 2010. p. 1316-1318. (48th Annual SID Symposium, Seminar, and Exhibition 2010, Display Week 2010). doi: 10.1889/1.3499931

New polymer-capped a-IGZO TFT with high sensitivity to visible light for the development of integrated touch sensor array

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