New peculiarities of interband tunneling in broken-gap heterostructures

A. Zakharova*, Shun-Tung Yen, K. A. Chao

*Corresponding author for this work

    Research output: Contribution to journalConference articlepeer-review

    Abstract

    We investigate the interband tunneling processes in a new type of heterostructures (broken-gap heterostructures) made from InAs, AlSb, and GaSb. Both the single-barrier and double-barrier structures are considered with the lattice mismatched strain taken into account. It is found that strain and bulk anisotropy of quasiparticle dispersions can result in additional peaks of the tunneling probability. The current-voltage (I-V) characteristics show strong dependence on the lattice-mismatched strain.

    Original languageEnglish
    Pages (from-to)392-401
    Number of pages10
    JournalProceedings of SPIE - The International Society for Optical Engineering
    Volume5401
    DOIs
    StatePublished - 2004
    EventMicro- and Nanoelectronics 2003 - Zvenigorod, Russian Federation
    Duration: 6 Oct 200310 Oct 2003

    Keywords

    • Broken-gap heterostructures
    • Lattice-mismatched strain
    • Tunneling

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