Abstract
A simple and effective method to adjust organic thin-film transistor photosensitivity was proposed. First, the full suppression of light-induced threshold-voltage shift was successfully demonstrated by applying negative gate bias during illumination. Then, the light-induced threshold-voltage shift that was modulated from 0 to 13.5 V was achieved by changing the drain and source bias from +15 to -15 V. Plausible mechanisms were proposed and verified. After light removal, the memory ability of the threshold-voltage shift was also greatly enhanced by the bias effect. The results demonstrate a sensitive organic phototransistor with memory ability by adjusting suitable bias conditions.
Original language | English |
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Pages (from-to) | 721-723 |
Number of pages | 3 |
Journal | Ieee Electron Device Letters |
Volume | 30 |
Issue number | 7 |
DOIs | |
State | Published - 2009 |
Keywords
- Bias modulation
- Memory
- Organic thin-film transistor (OTFT)
- Photosensitivity
- Phototransistor
- Stress