New organic phototransistor with bias-modulated photosensitivity and bias-enhanced memory effect

Hsiao-Wen Zan*, Shih Chin Kao

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

19 Scopus citations

Abstract

A simple and effective method to adjust organic thin-film transistor photosensitivity was proposed. First, the full suppression of light-induced threshold-voltage shift was successfully demonstrated by applying negative gate bias during illumination. Then, the light-induced threshold-voltage shift that was modulated from 0 to 13.5 V was achieved by changing the drain and source bias from +15 to -15 V. Plausible mechanisms were proposed and verified. After light removal, the memory ability of the threshold-voltage shift was also greatly enhanced by the bias effect. The results demonstrate a sensitive organic phototransistor with memory ability by adjusting suitable bias conditions.

Original languageEnglish
Pages (from-to)721-723
Number of pages3
JournalIEEE Electron Device Letters
Volume30
Issue number7
DOIs
StatePublished - 8 Jun 2009

Keywords

  • Bias modulation
  • Memory
  • Organic thin-film transistor (OTFT)
  • Photosensitivity
  • Phototransistor
  • Stress

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