New matching methodology of low-noise amplifier with ESD protection

Bo Shih Huang; Ming-Dou Ker

doi:10.1109/ISCAS.2006.1693727

New matching methodology of low-noise amplifier with ESD protection

Bo Shih Huang^*, Ming-Dou Ker

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

12 Scopus citations

Abstract

A new matching design of Low-Noise Amplifier (LNA) with ESD protection is proposed and implemented in an ESD-protected LNA, which manipulates the parasitic capacitance of ESD protection device as a core part of LNA matching network. Without significant degradation on RF performance, 4.5-kV Human-Body-Model (HBM) and 250-V Machine-Model (MM) ESD levels can be achieved. The low RF-performance degradation and high ESD immunity can be simultaneously realized in a simple matching structure without extra circuit components dealing with ESD parasitics in a multi-GHz LNA.

Original language	English
Title of host publication	ISCAS 2006
Subtitle of host publication	2006 IEEE International Symposium on Circuits and Systems, Proceedings
Pages	4891-4894
Number of pages	4
DOIs	https://doi.org/10.1109/ISCAS.2006.1693727
State	Published - 1 Dec 2006
Event	ISCAS 2006: 2006 IEEE International Symposium on Circuits and Systems - Kos, Greece Duration: 21 May 2006 → 24 May 2006

Publication series

Name	Proceedings - IEEE International Symposium on Circuits and Systems
ISSN (Print)	0271-4310

Conference

Conference	ISCAS 2006: 2006 IEEE International Symposium on Circuits and Systems
Country/Territory	Greece
City	Kos
Period	21/05/06 → 24/05/06

Access to Document

10.1109/ISCAS.2006.1693727

Cite this

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title = "New matching methodology of low-noise amplifier with ESD protection",

abstract = "A new matching design of Low-Noise Amplifier (LNA) with ESD protection is proposed and implemented in an ESD-protected LNA, which manipulates the parasitic capacitance of ESD protection device as a core part of LNA matching network. Without significant degradation on RF performance, 4.5-kV Human-Body-Model (HBM) and 250-V Machine-Model (MM) ESD levels can be achieved. The low RF-performance degradation and high ESD immunity can be simultaneously realized in a simple matching structure without extra circuit components dealing with ESD parasitics in a multi-GHz LNA.",

author = "Huang, {Bo Shih} and Ming-Dou Ker",

year = "2006",

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doi = "10.1109/ISCAS.2006.1693727",

language = "English",

isbn = "0780393902",

series = "Proceedings - IEEE International Symposium on Circuits and Systems",

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note = "ISCAS 2006: 2006 IEEE International Symposium on Circuits and Systems ; Conference date: 21-05-2006 Through 24-05-2006",

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Huang, BS & Ker, M-D 2006, New matching methodology of low-noise amplifier with ESD protection. in ISCAS 2006: 2006 IEEE International Symposium on Circuits and Systems, Proceedings., 1693727, Proceedings - IEEE International Symposium on Circuits and Systems, pp. 4891-4894, ISCAS 2006: 2006 IEEE International Symposium on Circuits and Systems, Kos, Greece, 21/05/06. https://doi.org/10.1109/ISCAS.2006.1693727

New matching methodology of low-noise amplifier with ESD protection. / Huang, Bo Shih; Ker, Ming-Dou.
ISCAS 2006: 2006 IEEE International Symposium on Circuits and Systems, Proceedings. 2006. p. 4891-4894 1693727 (Proceedings - IEEE International Symposium on Circuits and Systems).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Ker, Ming-Dou

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N2 - A new matching design of Low-Noise Amplifier (LNA) with ESD protection is proposed and implemented in an ESD-protected LNA, which manipulates the parasitic capacitance of ESD protection device as a core part of LNA matching network. Without significant degradation on RF performance, 4.5-kV Human-Body-Model (HBM) and 250-V Machine-Model (MM) ESD levels can be achieved. The low RF-performance degradation and high ESD immunity can be simultaneously realized in a simple matching structure without extra circuit components dealing with ESD parasitics in a multi-GHz LNA.

AB - A new matching design of Low-Noise Amplifier (LNA) with ESD protection is proposed and implemented in an ESD-protected LNA, which manipulates the parasitic capacitance of ESD protection device as a core part of LNA matching network. Without significant degradation on RF performance, 4.5-kV Human-Body-Model (HBM) and 250-V Machine-Model (MM) ESD levels can be achieved. The low RF-performance degradation and high ESD immunity can be simultaneously realized in a simple matching structure without extra circuit components dealing with ESD parasitics in a multi-GHz LNA.

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T3 - Proceedings - IEEE International Symposium on Circuits and Systems

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T2 - ISCAS 2006: 2006 IEEE International Symposium on Circuits and Systems

Y2 - 21 May 2006 through 24 May 2006

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New matching methodology of low-noise amplifier with ESD protection

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