New layout design for submicron CMOS output transistors to improve driving capability and ESD robustness in per unit layout area

Ming-Dou Ker; Tung Yang Chen; Chung-Yu Wu

doi:10.1109/IPFA.1997.638152

New layout design for submicron CMOS output transistors to improve driving capability and ESD robustness in per unit layout area

Ming-Dou Ker^*, Tung Yang Chen, Chung-Yu Wu

^*Corresponding author for this work

Institute of Electronics

Research output: Contribution to conference › Paper › peer-review

1 Scopus citations

Abstract

Three new device structures to effectively reduce the layout area of CMOS output buffers with higher driving capability and better ESD reliability are proposed. With theoretical calculation and experimental verification, both the higher output driving/sinking capability and the stronger ESD robustness of CMOS output buffers can be practically achieved by the new proposed layout designs within smaller layout area. The output devices assembled by a plurality of the proposed basic layout cells have a lower ploy-gate resistance and a smaller drain capacitance than that by the traditional finger-type layout.

Original language	English
Pages	103-108
Number of pages	6
DOIs	https://doi.org/10.1109/IPFA.1997.638152
State	Published - 1 Dec 1997
Event	Proceedings of the 1997 6th International Symposium on the Physical & Failure Analysis of Integrated Circuits, IPFA - Singapore, Singapore Duration: 21 Jul 1997 → 25 Jul 1997

Conference

Conference	Proceedings of the 1997 6th International Symposium on the Physical & Failure Analysis of Integrated Circuits, IPFA
City	Singapore, Singapore
Period	21/07/97 → 25/07/97

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10.1109/IPFA.1997.638152

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Ker, M.-D., Chen, T. Y., & Wu, C.-Y. (1997). New layout design for submicron CMOS output transistors to improve driving capability and ESD robustness in per unit layout area. 103-108. Paper presented at Proceedings of the 1997 6th International Symposium on the Physical & Failure Analysis of Integrated Circuits, IPFA, Singapore, Singapore. https://doi.org/10.1109/IPFA.1997.638152

@conference{3db1b127f884462f94a68fe4281f69f5,

title = "New layout design for submicron CMOS output transistors to improve driving capability and ESD robustness in per unit layout area",

abstract = "Three new device structures to effectively reduce the layout area of CMOS output buffers with higher driving capability and better ESD reliability are proposed. With theoretical calculation and experimental verification, both the higher output driving/sinking capability and the stronger ESD robustness of CMOS output buffers can be practically achieved by the new proposed layout designs within smaller layout area. The output devices assembled by a plurality of the proposed basic layout cells have a lower ploy-gate resistance and a smaller drain capacitance than that by the traditional finger-type layout.",

author = "Ming-Dou Ker and Chen, {Tung Yang} and Chung-Yu Wu",

year = "1997",

month = dec,

day = "1",

doi = "10.1109/IPFA.1997.638152",

language = "English",

pages = "103--108",

note = "Proceedings of the 1997 6th International Symposium on the Physical & Failure Analysis of Integrated Circuits, IPFA ; Conference date: 21-07-1997 Through 25-07-1997",

}

Ker, M-D, Chen, TY & Wu, C-Y 1997, 'New layout design for submicron CMOS output transistors to improve driving capability and ESD robustness in per unit layout area', Paper presented at Proceedings of the 1997 6th International Symposium on the Physical & Failure Analysis of Integrated Circuits, IPFA, Singapore, Singapore, 21/07/97 - 25/07/97 pp. 103-108. https://doi.org/10.1109/IPFA.1997.638152

New layout design for submicron CMOS output transistors to improve driving capability and ESD robustness in per unit layout area. / Ker, Ming-Dou; Chen, Tung Yang; Wu, Chung-Yu.
1997. 103-108 Paper presented at Proceedings of the 1997 6th International Symposium on the Physical & Failure Analysis of Integrated Circuits, IPFA, Singapore, Singapore.

Research output: Contribution to conference › Paper › peer-review

TY - CONF

T1 - New layout design for submicron CMOS output transistors to improve driving capability and ESD robustness in per unit layout area

AU - Ker, Ming-Dou

AU - Chen, Tung Yang

AU - Wu, Chung-Yu

PY - 1997/12/1

Y1 - 1997/12/1

N2 - Three new device structures to effectively reduce the layout area of CMOS output buffers with higher driving capability and better ESD reliability are proposed. With theoretical calculation and experimental verification, both the higher output driving/sinking capability and the stronger ESD robustness of CMOS output buffers can be practically achieved by the new proposed layout designs within smaller layout area. The output devices assembled by a plurality of the proposed basic layout cells have a lower ploy-gate resistance and a smaller drain capacitance than that by the traditional finger-type layout.

AB - Three new device structures to effectively reduce the layout area of CMOS output buffers with higher driving capability and better ESD reliability are proposed. With theoretical calculation and experimental verification, both the higher output driving/sinking capability and the stronger ESD robustness of CMOS output buffers can be practically achieved by the new proposed layout designs within smaller layout area. The output devices assembled by a plurality of the proposed basic layout cells have a lower ploy-gate resistance and a smaller drain capacitance than that by the traditional finger-type layout.

UR - http://www.scopus.com/inward/record.url?scp=0031341911&partnerID=8YFLogxK

U2 - 10.1109/IPFA.1997.638152

DO - 10.1109/IPFA.1997.638152

M3 - Paper

AN - SCOPUS:0031341911

SP - 103

EP - 108

T2 - Proceedings of the 1997 6th International Symposium on the Physical & Failure Analysis of Integrated Circuits, IPFA

Y2 - 21 July 1997 through 25 July 1997

ER -

New layout design for submicron CMOS output transistors to improve driving capability and ESD robustness in per unit layout area

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