New layout arrangement to improve ESD robustness of large-array high-voltage nLDMOS

Wen Yi Chen*, Ming-Dou Ker

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

26 Scopus citations

Fingerprint

Dive into the research topics of 'New layout arrangement to improve ESD robustness of large-array high-voltage nLDMOS'. Together they form a unique fingerprint.

Engineering & Materials Science

Chemical Compounds