New insights into breakdown modes and their evolution in ultra-thin gate oxide

Horng-Chih Lin; D. Y. Lee; C. Y. Lee; Tien-Sheng Chao; T. Y. Huang; Ta-Hui Wang

doi:10.1109/VTSA.2001.934477

New insights into breakdown modes and their evolution in ultra-thin gate oxide

Horng-Chih Lin, D. Y. Lee, C. Y. Lee, Tien-Sheng Chao, T. Y. Huang, Ta-Hui Wang

Research output: Contribution to journal › Article › peer-review

11 Scopus citations

Abstract

By carefully analyzing post-breakdown current-voltage characteristics of MOS devices, it was found that soft-breakdown mode typically induced in devices with oxide thinner than 3 nm is quite different from that with oxide thicker than 3 nm. Based on our findings, an unified model is proposed to explain the evolution of different breakdown modes. Impacts of each breakdown on device's switching behavior are also discussed.

Original language	English
Pages (from-to)	37-40
Number of pages	4
Journal	International Symposium on VLSI Technology, Systems, and Applications, Proceedings
DOIs	https://doi.org/10.1109/VTSA.2001.934477
State	Published - 2001

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10.1109/VTSA.2001.934477

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abstract = "By carefully analyzing post-breakdown current-voltage characteristics of MOS devices, it was found that soft-breakdown mode typically induced in devices with oxide thinner than 3 nm is quite different from that with oxide thicker than 3 nm. Based on our findings, an unified model is proposed to explain the evolution of different breakdown modes. Impacts of each breakdown on device's switching behavior are also discussed.",

author = "Horng-Chih Lin and Lee, {D. Y.} and Lee, {C. Y.} and Tien-Sheng Chao and Huang, {T. Y.} and Ta-Hui Wang",

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AU - Chao, Tien-Sheng

AU - Huang, T. Y.

AU - Wang, Ta-Hui

PY - 2001

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AB - By carefully analyzing post-breakdown current-voltage characteristics of MOS devices, it was found that soft-breakdown mode typically induced in devices with oxide thinner than 3 nm is quite different from that with oxide thicker than 3 nm. Based on our findings, an unified model is proposed to explain the evolution of different breakdown modes. Impacts of each breakdown on device's switching behavior are also discussed.

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JO - International Symposium on VLSI Technology, Systems, and Applications, Proceedings

JF - International Symposium on VLSI Technology, Systems, and Applications, Proceedings

ER -

New insights into breakdown modes and their evolution in ultra-thin gate oxide

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