Abstract
By carefully analyzing post-breakdown current-voltage characteristics of MOS devices, it was found that soft-breakdown mode typically induced in devices with oxide thinner than 3 nm is quite different from that with oxide thicker than 3 nm. Based on our findings, an unified model is proposed to explain the evolution of different breakdown modes. Impacts of each breakdown on device's switching behavior are also discussed.
Original language | English |
---|---|
Pages (from-to) | 37-40 |
Number of pages | 4 |
Journal | International Symposium on VLSI Technology, Systems, and Applications, Proceedings |
DOIs | |
State | Published - 1 Jan 2001 |