NEW GaSb/AISb/GaSb/AISb/InAs/AISb/InAs Triple-Barrier Interband Tunnelling Diode

L. Yang; Jenn-Fang Chen; A. Y. Cho

doi:10.1049/el:19900822

NEW GaSb/AISb/GaSb/AISb/InAs/AISb/InAs Triple-Barrier Interband Tunnelling Diode

L. Yang, Jenn-Fang Chen, A. Y. Cho

Department of Electrophysics

Research output: Contribution to journal › Article › peer-review

13 Scopus citations

Abstract

A new GaSb/AlSb/GaSb/AlSb/InAs/AlSb/InAs triple-barrier interband tunnelling diode (TBIT) is proposed and demonstrated. A peak-current density as high as 7-2kA/cm2 and a peak-to-valley-current ratio of 10 at room temperature were exhibited. In this device resonant tunnelling effects occur for both the electron in the InAs conduction band and the light hole in the GaSb conduction band through the AlSb/GaSb/AlSb/InAs/AlSb triple-barrier structure. The tunnelling process is greatly diminished, indicating the quantisation effect for both electrons and light holes by narrowing the InAs well and the GaSb well. This triple-barrier structure is the first demonstrated tunnelling structure which utilises the resonant tunnelling effect of both electrons and holes.

Original language	English
Pages (from-to)	1277-1279
Number of pages	3
Journal	Electronics Letters
Volume	26
Issue number	16
DOIs	https://doi.org/10.1049/el:19900822
State	Published - 1 Sep 1990

Keywords

Negative resistance
Semiconductor devices and materials
Tunnel diodes

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10.1049/el:19900822

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title = "NEW GaSb/AISb/GaSb/AISb/InAs/AISb/InAs Triple-Barrier Interband Tunnelling Diode",

abstract = "A new GaSb/AlSb/GaSb/AlSb/InAs/AlSb/InAs triple-barrier interband tunnelling diode (TBIT) is proposed and demonstrated. A peak-current density as high as 7-2kA/cm2 and a peak-to-valley-current ratio of 10 at room temperature were exhibited. In this device resonant tunnelling effects occur for both the electron in the InAs conduction band and the light hole in the GaSb conduction band through the AlSb/GaSb/AlSb/InAs/AlSb triple-barrier structure. The tunnelling process is greatly diminished, indicating the quantisation effect for both electrons and light holes by narrowing the InAs well and the GaSb well. This triple-barrier structure is the first demonstrated tunnelling structure which utilises the resonant tunnelling effect of both electrons and holes.",

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AU - Yang, L.

AU - Chen, Jenn-Fang

AU - Cho, A. Y.

PY - 1990/9/1

Y1 - 1990/9/1

N2 - A new GaSb/AlSb/GaSb/AlSb/InAs/AlSb/InAs triple-barrier interband tunnelling diode (TBIT) is proposed and demonstrated. A peak-current density as high as 7-2kA/cm2 and a peak-to-valley-current ratio of 10 at room temperature were exhibited. In this device resonant tunnelling effects occur for both the electron in the InAs conduction band and the light hole in the GaSb conduction band through the AlSb/GaSb/AlSb/InAs/AlSb triple-barrier structure. The tunnelling process is greatly diminished, indicating the quantisation effect for both electrons and light holes by narrowing the InAs well and the GaSb well. This triple-barrier structure is the first demonstrated tunnelling structure which utilises the resonant tunnelling effect of both electrons and holes.

AB - A new GaSb/AlSb/GaSb/AlSb/InAs/AlSb/InAs triple-barrier interband tunnelling diode (TBIT) is proposed and demonstrated. A peak-current density as high as 7-2kA/cm2 and a peak-to-valley-current ratio of 10 at room temperature were exhibited. In this device resonant tunnelling effects occur for both the electron in the InAs conduction band and the light hole in the GaSb conduction band through the AlSb/GaSb/AlSb/InAs/AlSb triple-barrier structure. The tunnelling process is greatly diminished, indicating the quantisation effect for both electrons and light holes by narrowing the InAs well and the GaSb well. This triple-barrier structure is the first demonstrated tunnelling structure which utilises the resonant tunnelling effect of both electrons and holes.

KW - Negative resistance

KW - Semiconductor devices and materials

KW - Tunnel diodes

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U2 - 10.1049/el:19900822

DO - 10.1049/el:19900822

M3 - Article

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VL - 26

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EP - 1279

JO - Electronics Letters

JF - Electronics Letters

IS - 16

ER -

NEW GaSb/AISb/GaSb/AISb/InAs/AISb/InAs Triple-Barrier Interband Tunnelling Diode

Abstract

Keywords

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