New findings on low frequency noise and mismatching properties in uniaxial strained PMOSFETs

Jack J.Y. Kuo; William P.N. Chen; Pin Su

doi:10.1109/ESSDERC.2009.5331461

New findings on low frequency noise and mismatching properties in uniaxial strained PMOSFETs

Jack J.Y. Kuo, William P.N. Chen, Pin Su

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

We report new findings on the intrinsic effect of uniaxial strain on low frequency noise and device mismatch in nanoscale pMOSFETs. Our study indicates that the low frequency noise and mismatching properties of the strained device are altered by the tunneling attenuation length, mobility fluctuation, and the critical electric field at which the carrier velocity becomes saturated.

Original language	English
Title of host publication	ESSDERC 2009 - Proceedings of the 39th European Solid-State Device Research Conference
Pages	327-330
Number of pages	4
DOIs	https://doi.org/10.1109/ESSDERC.2009.5331461
State	Published - 2009
Event	39th European Solid-State Device Research Conference, ESSDERC 2009 - Athens, Greece Duration: 14 Sep 2009 → 18 Sep 2009

Publication series

Name	ESSDERC 2009 - Proceedings of the 39th European Solid-State Device Research Conference

Conference

Conference	39th European Solid-State Device Research Conference, ESSDERC 2009
Country/Territory	Greece
City	Athens
Period	14/09/09 → 18/09/09

Access to Document

10.1109/ESSDERC.2009.5331461

Cite this

Kuo, J. J. Y., Chen, W. P. N., & Su, P. (2009). New findings on low frequency noise and mismatching properties in uniaxial strained PMOSFETs. In ESSDERC 2009 - Proceedings of the 39th European Solid-State Device Research Conference (pp. 327-330). Article 5331461 (ESSDERC 2009 - Proceedings of the 39th European Solid-State Device Research Conference). https://doi.org/10.1109/ESSDERC.2009.5331461

@inproceedings{6691ad0f3f8e48c7a4d12740aa9f1a5d,

title = "New findings on low frequency noise and mismatching properties in uniaxial strained PMOSFETs",

abstract = "We report new findings on the intrinsic effect of uniaxial strain on low frequency noise and device mismatch in nanoscale pMOSFETs. Our study indicates that the low frequency noise and mismatching properties of the strained device are altered by the tunneling attenuation length, mobility fluctuation, and the critical electric field at which the carrier velocity becomes saturated.",

author = "Kuo, {Jack J.Y.} and Chen, {William P.N.} and Pin Su",

year = "2009",

doi = "10.1109/ESSDERC.2009.5331461",

language = "English",

isbn = "9781424443536",

series = "ESSDERC 2009 - Proceedings of the 39th European Solid-State Device Research Conference",

pages = "327--330",

booktitle = "ESSDERC 2009 - Proceedings of the 39th European Solid-State Device Research Conference",

note = "39th European Solid-State Device Research Conference, ESSDERC 2009 ; Conference date: 14-09-2009 Through 18-09-2009",

}

Kuo, JJY, Chen, WPN & Su, P 2009, New findings on low frequency noise and mismatching properties in uniaxial strained PMOSFETs. in ESSDERC 2009 - Proceedings of the 39th European Solid-State Device Research Conference., 5331461, ESSDERC 2009 - Proceedings of the 39th European Solid-State Device Research Conference, pp. 327-330, 39th European Solid-State Device Research Conference, ESSDERC 2009, Athens, Greece, 14/09/09. https://doi.org/10.1109/ESSDERC.2009.5331461

New findings on low frequency noise and mismatching properties in uniaxial strained PMOSFETs. / Kuo, Jack J.Y.; Chen, William P.N.; Su, Pin.
ESSDERC 2009 - Proceedings of the 39th European Solid-State Device Research Conference. 2009. p. 327-330 5331461 (ESSDERC 2009 - Proceedings of the 39th European Solid-State Device Research Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - New findings on low frequency noise and mismatching properties in uniaxial strained PMOSFETs

AU - Kuo, Jack J.Y.

AU - Chen, William P.N.

AU - Su, Pin

PY - 2009

Y1 - 2009

N2 - We report new findings on the intrinsic effect of uniaxial strain on low frequency noise and device mismatch in nanoscale pMOSFETs. Our study indicates that the low frequency noise and mismatching properties of the strained device are altered by the tunneling attenuation length, mobility fluctuation, and the critical electric field at which the carrier velocity becomes saturated.

AB - We report new findings on the intrinsic effect of uniaxial strain on low frequency noise and device mismatch in nanoscale pMOSFETs. Our study indicates that the low frequency noise and mismatching properties of the strained device are altered by the tunneling attenuation length, mobility fluctuation, and the critical electric field at which the carrier velocity becomes saturated.

UR - http://www.scopus.com/inward/record.url?scp=72949101849&partnerID=8YFLogxK

U2 - 10.1109/ESSDERC.2009.5331461

DO - 10.1109/ESSDERC.2009.5331461

M3 - Conference contribution

AN - SCOPUS:72949101849

SN - 9781424443536

T3 - ESSDERC 2009 - Proceedings of the 39th European Solid-State Device Research Conference

SP - 327

EP - 330

BT - ESSDERC 2009 - Proceedings of the 39th European Solid-State Device Research Conference

T2 - 39th European Solid-State Device Research Conference, ESSDERC 2009

Y2 - 14 September 2009 through 18 September 2009

ER -

New findings on low frequency noise and mismatching properties in uniaxial strained PMOSFETs

Abstract

Publication series

Conference

Access to Document

Other files and links

Fingerprint

Cite this