New experimental evidences of the plasma charging enhanced hot carrier effect and its impact on surface channel CMOS devices

S. J. Chen; C. C. Lin; Steve S. Chung; Horng-Chih Lin

doi:10.1109/VTSA.2001.934476

New experimental evidences of the plasma charging enhanced hot carrier effect and its impact on surface channel CMOS devices

S. J. Chen^*, C. C. Lin, Steve S. Chung, Horng-Chih Lin

^*Corresponding author for this work

Institute of Electronics

Research output: Contribution to conference › Paper › peer-review

1 Scopus citations

Abstract

Plasma etching of poly-silicon gate in CMOS devices induces the plasma edge damage. This damage will be enhanced in the successive plasma processes. New experimental evidences of this effect will be examined in this study. Results have been verified for both surface channel n-and p-MOSFETs. First, from the measurements of high-density antenna structures, this enhanced edge damage has been characterized by the charge-pumping (CP) profiling technique. Then, a 4-phase edge damage mechanism has been proposed. For the first time, it was found that a two-peak spatial distribution of the interface state was found near the device drain region. We call it Plasma Charging Enhanced Hot Carrier (PCE-HC) effect. This enhanced damage effect will induce further device degradation, in particular for the scaled devices.

Original language	English
Pages	33-36
Number of pages	4
DOIs	https://doi.org/10.1109/VTSA.2001.934476
State	Published - Apr 2001
Event	2001 International Symposium on VLSI Technology, Systems, and Applications, Proceedings - Hsinchu, Taiwan Duration: 18 Apr 2001 → 20 Apr 2001

Conference

Conference	2001 International Symposium on VLSI Technology, Systems, and Applications, Proceedings
Country/Territory	Taiwan
City	Hsinchu
Period	18/04/01 → 20/04/01

Access to Document

10.1109/VTSA.2001.934476

Cite this

@conference{1920f82deb324c7eb051ef6ac4b9c1ed,

title = "New experimental evidences of the plasma charging enhanced hot carrier effect and its impact on surface channel CMOS devices",

abstract = "Plasma etching of poly-silicon gate in CMOS devices induces the plasma edge damage. This damage will be enhanced in the successive plasma processes. New experimental evidences of this effect will be examined in this study. Results have been verified for both surface channel n-and p-MOSFETs. First, from the measurements of high-density antenna structures, this enhanced edge damage has been characterized by the charge-pumping (CP) profiling technique. Then, a 4-phase edge damage mechanism has been proposed. For the first time, it was found that a two-peak spatial distribution of the interface state was found near the device drain region. We call it Plasma Charging Enhanced Hot Carrier (PCE-HC) effect. This enhanced damage effect will induce further device degradation, in particular for the scaled devices.",

author = "Chen, {S. J.} and Lin, {C. C.} and Chung, {Steve S.} and Horng-Chih Lin",

year = "2001",

month = apr,

doi = "10.1109/VTSA.2001.934476",

language = "English",

pages = "33--36",

note = "2001 International Symposium on VLSI Technology, Systems, and Applications, Proceedings ; Conference date: 18-04-2001 Through 20-04-2001",

}

Chen, SJ, Lin, CC, Chung, SS & Lin, H-C 2001, 'New experimental evidences of the plasma charging enhanced hot carrier effect and its impact on surface channel CMOS devices', Paper presented at 2001 International Symposium on VLSI Technology, Systems, and Applications, Proceedings, Hsinchu, Taiwan, 18/04/01 - 20/04/01 pp. 33-36. https://doi.org/10.1109/VTSA.2001.934476

New experimental evidences of the plasma charging enhanced hot carrier effect and its impact on surface channel CMOS devices. / Chen, S. J.; Lin, C. C.; Chung, Steve S. et al.
2001. 33-36 Paper presented at 2001 International Symposium on VLSI Technology, Systems, and Applications, Proceedings, Hsinchu, Taiwan.

Research output: Contribution to conference › Paper › peer-review

TY - CONF

T1 - New experimental evidences of the plasma charging enhanced hot carrier effect and its impact on surface channel CMOS devices

AU - Chen, S. J.

AU - Lin, C. C.

AU - Chung, Steve S.

AU - Lin, Horng-Chih

PY - 2001/4

Y1 - 2001/4

N2 - Plasma etching of poly-silicon gate in CMOS devices induces the plasma edge damage. This damage will be enhanced in the successive plasma processes. New experimental evidences of this effect will be examined in this study. Results have been verified for both surface channel n-and p-MOSFETs. First, from the measurements of high-density antenna structures, this enhanced edge damage has been characterized by the charge-pumping (CP) profiling technique. Then, a 4-phase edge damage mechanism has been proposed. For the first time, it was found that a two-peak spatial distribution of the interface state was found near the device drain region. We call it Plasma Charging Enhanced Hot Carrier (PCE-HC) effect. This enhanced damage effect will induce further device degradation, in particular for the scaled devices.

AB - Plasma etching of poly-silicon gate in CMOS devices induces the plasma edge damage. This damage will be enhanced in the successive plasma processes. New experimental evidences of this effect will be examined in this study. Results have been verified for both surface channel n-and p-MOSFETs. First, from the measurements of high-density antenna structures, this enhanced edge damage has been characterized by the charge-pumping (CP) profiling technique. Then, a 4-phase edge damage mechanism has been proposed. For the first time, it was found that a two-peak spatial distribution of the interface state was found near the device drain region. We call it Plasma Charging Enhanced Hot Carrier (PCE-HC) effect. This enhanced damage effect will induce further device degradation, in particular for the scaled devices.

UR - http://www.scopus.com/inward/record.url?scp=0034856202&partnerID=8YFLogxK

U2 - 10.1109/VTSA.2001.934476

DO - 10.1109/VTSA.2001.934476

M3 - Paper

AN - SCOPUS:0034856202

SP - 33

EP - 36

T2 - 2001 International Symposium on VLSI Technology, Systems, and Applications, Proceedings

Y2 - 18 April 2001 through 20 April 2001

ER -

New experimental evidences of the plasma charging enhanced hot carrier effect and its impact on surface channel CMOS devices

Abstract

Conference

Access to Document

Other files and links

Fingerprint

Cite this