New design concept for on-chip ESD protection circuits with already-on device in nanoscale CMOS technology

Ming-Dou Ker; Kuo Chun Hsu

New design concept for on-chip ESD protection circuits with already-on device in nanoscale CMOS technology

^*Corresponding author for this work

Research output: Contribution to conference › Paper › peer-review

Abstract

A new design concept for on-chip electrostatic discharge (BSD) protection circuits with the already-on device is proposed to provide efficient BSD protection for ICs in nanoscale CMOS technologies. The already-on device used in this work is the native-NMOS-triggered SCR (NANSCR) device, which has a trigger voltage of almost zero in a 130-nm CMOS process. The already-on NANSCR has the lowest trigger voltage, smaller turn-on resistance, lower holding voltage, faster turn-on speed, and higher BSD level than those of traditional design.

Original language	English
Pages	841-844
Number of pages	4
State	Published - Dec 2004
Event	2004 IEEE Asia-Pacific Conference on Circuits and Systems, APCCAS 2004: SoC Design for Ubiquitous Information Technology - Tainan, Taiwan Duration: 6 Dec 2004 → 9 Dec 2004

Conference

Conference	2004 IEEE Asia-Pacific Conference on Circuits and Systems, APCCAS 2004: SoC Design for Ubiquitous Information Technology
Country/Territory	Taiwan
City	Tainan
Period	6/12/04 → 9/12/04

Cite this

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title = "New design concept for on-chip ESD protection circuits with already-on device in nanoscale CMOS technology",

abstract = "A new design concept for on-chip electrostatic discharge (BSD) protection circuits with the already-on device is proposed to provide efficient BSD protection for ICs in nanoscale CMOS technologies. The already-on device used in this work is the native-NMOS-triggered SCR (NANSCR) device, which has a trigger voltage of almost zero in a 130-nm CMOS process. The already-on NANSCR has the lowest trigger voltage, smaller turn-on resistance, lower holding voltage, faster turn-on speed, and higher BSD level than those of traditional design.",

author = "Ming-Dou Ker and Hsu, {Kuo Chun}",

year = "2004",

month = dec,

language = "English",

pages = "841--844",

note = "2004 IEEE Asia-Pacific Conference on Circuits and Systems, APCCAS 2004: SoC Design for Ubiquitous Information Technology ; Conference date: 06-12-2004 Through 09-12-2004",

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New design concept for on-chip ESD protection circuits with already-on device in nanoscale CMOS technology. / Ker, Ming-Dou; Hsu, Kuo Chun.
2004. 841-844 Paper presented at 2004 IEEE Asia-Pacific Conference on Circuits and Systems, APCCAS 2004: SoC Design for Ubiquitous Information Technology, Tainan, Taiwan.

Research output: Contribution to conference › Paper › peer-review

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AU - Ker, Ming-Dou

AU - Hsu, Kuo Chun

PY - 2004/12

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N2 - A new design concept for on-chip electrostatic discharge (BSD) protection circuits with the already-on device is proposed to provide efficient BSD protection for ICs in nanoscale CMOS technologies. The already-on device used in this work is the native-NMOS-triggered SCR (NANSCR) device, which has a trigger voltage of almost zero in a 130-nm CMOS process. The already-on NANSCR has the lowest trigger voltage, smaller turn-on resistance, lower holding voltage, faster turn-on speed, and higher BSD level than those of traditional design.

AB - A new design concept for on-chip electrostatic discharge (BSD) protection circuits with the already-on device is proposed to provide efficient BSD protection for ICs in nanoscale CMOS technologies. The already-on device used in this work is the native-NMOS-triggered SCR (NANSCR) device, which has a trigger voltage of almost zero in a 130-nm CMOS process. The already-on NANSCR has the lowest trigger voltage, smaller turn-on resistance, lower holding voltage, faster turn-on speed, and higher BSD level than those of traditional design.

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T2 - 2004 IEEE Asia-Pacific Conference on Circuits and Systems, APCCAS 2004: SoC Design for Ubiquitous Information Technology

Y2 - 6 December 2004 through 9 December 2004

ER -

New design concept for on-chip ESD protection circuits with already-on device in nanoscale CMOS technology

Abstract

Conference

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