A new design concept for on-chip electrostatic discharge (BSD) protection circuits with the already-on device is proposed to provide efficient BSD protection for ICs in nanoscale CMOS technologies. The already-on device used in this work is the native-NMOS-triggered SCR (NANSCR) device, which has a trigger voltage of almost zero in a 130-nm CMOS process. The already-on NANSCR has the lowest trigger voltage, smaller turn-on resistance, lower holding voltage, faster turn-on speed, and higher BSD level than those of traditional design.
|Number of pages||4|
|State||Published - Dec 2004|
|Event||2004 IEEE Asia-Pacific Conference on Circuits and Systems, APCCAS 2004: SoC Design for Ubiquitous Information Technology - Tainan, Taiwan|
Duration: 6 Dec 2004 → 9 Dec 2004
|Conference||2004 IEEE Asia-Pacific Conference on Circuits and Systems, APCCAS 2004: SoC Design for Ubiquitous Information Technology|
|Period||6/12/04 → 9/12/04|