New curvature-compensation technique for cmos bandgap reference with sub-1-v operation

Ming-Dou Ker, Jung Sheng Chen, Ching Yun Chu

    Research output: Contribution to journalConference articlepeer-review

    19 Scopus citations

    Abstract

    A new sub-1-V curvature-compensated CMOS bandgap reference, which utilizes the temperature-dependent currents generated from the parasitic NPN and PNP BJT devices in CMOS process, is presented. The new proposed sub-1-V curvature-compensated CMOS bandgap reference has been successfully verified in a standard 0.25-μm CMOS process. The experimental results have verified that, at the minimum supply voltage of 0.9 V, the output reference voltage is 536.7 mV with a temperature coefficient of 19.55 ppm/°C from 0 °C to 100 °C. With 0.9-V supply voltage, the measured power noise rejection ratio is -25.5 dB at 10 kHz.

    Original languageEnglish
    Article number1465473
    Pages (from-to)3861-3864
    Number of pages4
    JournalProceedings - IEEE International Symposium on Circuits and Systems
    DOIs
    StatePublished - 1 Dec 2005
    EventIEEE International Symposium on Circuits and Systems 2005, ISCAS 2005 - Kobe, Japan
    Duration: 23 May 200526 May 2005

    Fingerprint

    Dive into the research topics of 'New curvature-compensation technique for cmos bandgap reference with sub-1-v operation'. Together they form a unique fingerprint.

    Cite this