New curvature-compensation technique for cmos bandgap reference with sub-1-v operation

Ming-Dou Ker; Jung Sheng Chen; Ching Yun Chu

doi:10.1109/ISCAS.2005.1465473

New curvature-compensation technique for cmos bandgap reference with sub-1-v operation

Ming-Dou Ker, Jung Sheng Chen, Ching Yun Chu

Research output: Contribution to journal › Conference article › peer-review

15 Scopus citations

Abstract

A new sub-1-V curvature-compensated CMOS bandgap reference, which utilizes the temperature-dependent currents generated from the parasitic NPN and PNP BJT devices in CMOS process, is presented. The new proposed sub-1-V curvature-compensated CMOS bandgap reference has been successfully verified in a standard 0.25-μm CMOS process. The experimental results have verified that, at the minimum supply voltage of 0.9 V, the output reference voltage is 536.7 mV with a temperature coefficient of 19.55 ppm/°C from 0 °C to 100 °C. With 0.9-V supply voltage, the measured power noise rejection ratio is -25.5 dB at 10 kHz.

Original language	English
Article number	1465473
Pages (from-to)	3861-3864
Number of pages	4
Journal	Proceedings - IEEE International Symposium on Circuits and Systems
DOIs	https://doi.org/10.1109/ISCAS.2005.1465473
State	Published - 1 Dec 2005
Event	IEEE International Symposium on Circuits and Systems 2005, ISCAS 2005 - Kobe, Japan Duration: 23 May 2005 → 26 May 2005

Access to Document

10.1109/ISCAS.2005.1465473

Cite this

@article{63773477f6cd4ca792752d100bd04bff,

title = "New curvature-compensation technique for cmos bandgap reference with sub-1-v operation",

abstract = "A new sub-1-V curvature-compensated CMOS bandgap reference, which utilizes the temperature-dependent currents generated from the parasitic NPN and PNP BJT devices in CMOS process, is presented. The new proposed sub-1-V curvature-compensated CMOS bandgap reference has been successfully verified in a standard 0.25-μm CMOS process. The experimental results have verified that, at the minimum supply voltage of 0.9 V, the output reference voltage is 536.7 mV with a temperature coefficient of 19.55 ppm/°C from 0 °C to 100 °C. With 0.9-V supply voltage, the measured power noise rejection ratio is -25.5 dB at 10 kHz.",

author = "Ming-Dou Ker and Chen, {Jung Sheng} and Chu, {Ching Yun}",

year = "2005",

month = dec,

day = "1",

doi = "10.1109/ISCAS.2005.1465473",

language = "English",

pages = "3861--3864",

journal = "Proceedings - IEEE International Symposium on Circuits and Systems",

issn = "0271-4310",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "null ; Conference date: 23-05-2005 Through 26-05-2005",

}

TY - JOUR

T1 - New curvature-compensation technique for cmos bandgap reference with sub-1-v operation

AU - Ker, Ming-Dou

AU - Chen, Jung Sheng

AU - Chu, Ching Yun

PY - 2005/12/1

Y1 - 2005/12/1

N2 - A new sub-1-V curvature-compensated CMOS bandgap reference, which utilizes the temperature-dependent currents generated from the parasitic NPN and PNP BJT devices in CMOS process, is presented. The new proposed sub-1-V curvature-compensated CMOS bandgap reference has been successfully verified in a standard 0.25-μm CMOS process. The experimental results have verified that, at the minimum supply voltage of 0.9 V, the output reference voltage is 536.7 mV with a temperature coefficient of 19.55 ppm/°C from 0 °C to 100 °C. With 0.9-V supply voltage, the measured power noise rejection ratio is -25.5 dB at 10 kHz.

AB - A new sub-1-V curvature-compensated CMOS bandgap reference, which utilizes the temperature-dependent currents generated from the parasitic NPN and PNP BJT devices in CMOS process, is presented. The new proposed sub-1-V curvature-compensated CMOS bandgap reference has been successfully verified in a standard 0.25-μm CMOS process. The experimental results have verified that, at the minimum supply voltage of 0.9 V, the output reference voltage is 536.7 mV with a temperature coefficient of 19.55 ppm/°C from 0 °C to 100 °C. With 0.9-V supply voltage, the measured power noise rejection ratio is -25.5 dB at 10 kHz.

UR - http://www.scopus.com/inward/record.url?scp=33748563341&partnerID=8YFLogxK

U2 - 10.1109/ISCAS.2005.1465473

DO - 10.1109/ISCAS.2005.1465473

M3 - Conference article

AN - SCOPUS:33748563341

SN - 0271-4310

SP - 3861

EP - 3864

JO - Proceedings - IEEE International Symposium on Circuits and Systems

JF - Proceedings - IEEE International Symposium on Circuits and Systems

M1 - 1465473

Y2 - 23 May 2005 through 26 May 2005

ER -

New curvature-compensation technique for cmos bandgap reference with sub-1-v operation

Abstract

Access to Document

Other files and links

Fingerprint

Cite this