Nearly Ideal Subthreshold Swing in Monolayer MoS Top-Gate nFETs with Scaled EOT of 1 nm

Tsung En Lee; Yuan Chun Su; Bo Jiun Lin; Yi Xuan Chen; Wei Sheng Yun; Po Hsun Ho; Jer Fu Wang; Sheng Kai Su; Chen Feng Hsu; Po Sen Mao; Yu Cheng Chang; Chao Hsin Chien; Bo Heng Liu; Chien Ying Su; Chi Chung Kei; Han Wang; H. S. Philip Wong; T. Y. Lee; Wen Hao Chang; Chao Ching Cheng; Iuliana P. Radu

doi:10.1109/IEDM45625.2022.10019552

Nearly Ideal Subthreshold Swing in Monolayer MoS Top-Gate nFETs with Scaled EOT of 1 nm

Tsung En Lee^*, Yuan Chun Su, Bo Jiun Lin, Yi Xuan Chen, Wei Sheng Yun, Po Hsun Ho, Jer Fu Wang, Sheng Kai Su, Chen Feng Hsu, Po Sen Mao, Yu Cheng Chang, Chao Hsin Chien, Bo Heng Liu, Chien Ying Su, Chi Chung Kei, Han Wang, H. S. Philip Wong, T. Y. Lee, Wen Hao Chang, Chao Ching ChengIuliana P. Radu

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

13 Scopus citations

Abstract

Transistor scaling enabled by gate length scaling requires EOT scaling to less than 1 nm thickness [1]. This work successfully integrates Hf-based ALD higher-k dielectrics with CVD-grown monolayer (1L) MoS2 to build top-gate nFET with EOT 1 nm with nearly ideal subthreshold swing of 68 mV/dec. The gate stack described here achieves a high varepsilon-{ mathrm{e} mathrm{f} mathrm{f}} 13.53, a large mathrm{E}-{ mathrm{B} mathrm{D}} 12.4MV/cm, and excellent leakage current density. This is a remarkable performance among reported gate dielectrics on the transition metal dichalcogenides (TMDs) on which it is notoriously difficult to deposit a pinhole-free dielectric.

Original language	English
Title of host publication	2022 International Electron Devices Meeting, IEDM 2022
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	741-744
Number of pages	4
ISBN (Electronic)	9781665489591
DOIs	https://doi.org/10.1109/IEDM45625.2022.10019552
State	Published - 2022
Event	2022 International Electron Devices Meeting, IEDM 2022 - San Francisco, United States Duration: 3 Dec 2022 → 7 Dec 2022

Publication series

Name	Technical Digest - International Electron Devices Meeting, IEDM
Volume	2022-December
ISSN (Print)	0163-1918

Conference

Conference	2022 International Electron Devices Meeting, IEDM 2022
Country/Territory	United States
City	San Francisco
Period	3/12/22 → 7/12/22

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10.1109/IEDM45625.2022.10019552

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Lee, T. E., Su, Y. C., Lin, B. J., Chen, Y. X., Yun, W. S., Ho, P. H., Wang, J. F., Su, S. K., Hsu, C. F., Mao, P. S., Chang, Y. C., Chien, C. H., Liu, B. H., Su, C. Y., Kei, C. C., Wang, H., Philip Wong, H. S., Lee, T. Y., Chang, W. H., ... Radu, I. P. (2022). Nearly Ideal Subthreshold Swing in Monolayer MoS Top-Gate nFETs with Scaled EOT of 1 nm. In 2022 International Electron Devices Meeting, IEDM 2022 (pp. 741-744). (Technical Digest - International Electron Devices Meeting, IEDM; Vol. 2022-December). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IEDM45625.2022.10019552

@inproceedings{52acbb1ae43847cca1ce3ba6edea33a6,

title = "Nearly Ideal Subthreshold Swing in Monolayer MoS Top-Gate nFETs with Scaled EOT of 1 nm",

abstract = "Transistor scaling enabled by gate length scaling requires EOT scaling to less than 1 nm thickness [1]. This work successfully integrates Hf-based ALD higher-k dielectrics with CVD-grown monolayer (1L) MoS2 to build top-gate nFET with EOT 1 nm with nearly ideal subthreshold swing of 68 mV/dec. The gate stack described here achieves a high varepsilon-{ mathrm{e} mathrm{f} mathrm{f}} 13.53, a large mathrm{E}-{ mathrm{B} mathrm{D}} 12.4MV/cm, and excellent leakage current density. This is a remarkable performance among reported gate dielectrics on the transition metal dichalcogenides (TMDs) on which it is notoriously difficult to deposit a pinhole-free dielectric.",

author = "Lee, {Tsung En} and Su, {Yuan Chun} and Lin, {Bo Jiun} and Chen, {Yi Xuan} and Yun, {Wei Sheng} and Ho, {Po Hsun} and Wang, {Jer Fu} and Su, {Sheng Kai} and Hsu, {Chen Feng} and Mao, {Po Sen} and Chang, {Yu Cheng} and Chien, {Chao Hsin} and Liu, {Bo Heng} and Su, {Chien Ying} and Kei, {Chi Chung} and Han Wang and {Philip Wong}, {H. S.} and Lee, {T. Y.} and Chang, {Wen Hao} and Cheng, {Chao Ching} and Radu, {Iuliana P.}",

note = "Publisher Copyright: {\textcopyright} 2022 IEEE.; 2022 International Electron Devices Meeting, IEDM 2022 ; Conference date: 03-12-2022 Through 07-12-2022",

year = "2022",

doi = "10.1109/IEDM45625.2022.10019552",

language = "English",

series = "Technical Digest - International Electron Devices Meeting, IEDM",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "741--744",

booktitle = "2022 International Electron Devices Meeting, IEDM 2022",

address = "美國",

}

Lee, TE, Su, YC, Lin, BJ, Chen, YX, Yun, WS, Ho, PH, Wang, JF, Su, SK, Hsu, CF, Mao, PS, Chang, YC, Chien, CH, Liu, BH, Su, CY, Kei, CC, Wang, H, Philip Wong, HS, Lee, TY, Chang, WH, Cheng, CC & Radu, IP 2022, Nearly Ideal Subthreshold Swing in Monolayer MoS Top-Gate nFETs with Scaled EOT of 1 nm. in 2022 International Electron Devices Meeting, IEDM 2022. Technical Digest - International Electron Devices Meeting, IEDM, vol. 2022-December, Institute of Electrical and Electronics Engineers Inc., pp. 741-744, 2022 International Electron Devices Meeting, IEDM 2022, San Francisco, United States, 3/12/22. https://doi.org/10.1109/IEDM45625.2022.10019552

Nearly Ideal Subthreshold Swing in Monolayer MoS Top-Gate nFETs with Scaled EOT of 1 nm. / Lee, Tsung En; Su, Yuan Chun; Lin, Bo Jiun et al.
2022 International Electron Devices Meeting, IEDM 2022. Institute of Electrical and Electronics Engineers Inc., 2022. p. 741-744 (Technical Digest - International Electron Devices Meeting, IEDM; Vol. 2022-December).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Nearly Ideal Subthreshold Swing in Monolayer MoS Top-Gate nFETs with Scaled EOT of 1 nm

AU - Lee, Tsung En

AU - Su, Yuan Chun

AU - Lin, Bo Jiun

AU - Chen, Yi Xuan

AU - Yun, Wei Sheng

AU - Ho, Po Hsun

AU - Wang, Jer Fu

AU - Su, Sheng Kai

AU - Hsu, Chen Feng

AU - Mao, Po Sen

AU - Chang, Yu Cheng

AU - Chien, Chao Hsin

AU - Liu, Bo Heng

AU - Su, Chien Ying

AU - Kei, Chi Chung

AU - Wang, Han

AU - Philip Wong, H. S.

AU - Lee, T. Y.

AU - Chang, Wen Hao

AU - Cheng, Chao Ching

AU - Radu, Iuliana P.

PY - 2022

Y1 - 2022

N2 - Transistor scaling enabled by gate length scaling requires EOT scaling to less than 1 nm thickness [1]. This work successfully integrates Hf-based ALD higher-k dielectrics with CVD-grown monolayer (1L) MoS2 to build top-gate nFET with EOT 1 nm with nearly ideal subthreshold swing of 68 mV/dec. The gate stack described here achieves a high varepsilon-{ mathrm{e} mathrm{f} mathrm{f}} 13.53, a large mathrm{E}-{ mathrm{B} mathrm{D}} 12.4MV/cm, and excellent leakage current density. This is a remarkable performance among reported gate dielectrics on the transition metal dichalcogenides (TMDs) on which it is notoriously difficult to deposit a pinhole-free dielectric.

AB - Transistor scaling enabled by gate length scaling requires EOT scaling to less than 1 nm thickness [1]. This work successfully integrates Hf-based ALD higher-k dielectrics with CVD-grown monolayer (1L) MoS2 to build top-gate nFET with EOT 1 nm with nearly ideal subthreshold swing of 68 mV/dec. The gate stack described here achieves a high varepsilon-{ mathrm{e} mathrm{f} mathrm{f}} 13.53, a large mathrm{E}-{ mathrm{B} mathrm{D}} 12.4MV/cm, and excellent leakage current density. This is a remarkable performance among reported gate dielectrics on the transition metal dichalcogenides (TMDs) on which it is notoriously difficult to deposit a pinhole-free dielectric.

UR - http://www.scopus.com/inward/record.url?scp=85147529004&partnerID=8YFLogxK

U2 - 10.1109/IEDM45625.2022.10019552

DO - 10.1109/IEDM45625.2022.10019552

M3 - Conference contribution

AN - SCOPUS:85147529004

T3 - Technical Digest - International Electron Devices Meeting, IEDM

SP - 741

EP - 744

BT - 2022 International Electron Devices Meeting, IEDM 2022

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2022 International Electron Devices Meeting, IEDM 2022

Y2 - 3 December 2022 through 7 December 2022

ER -

Lee TE, Su YC, Lin BJ, Chen YX, Yun WS, Ho PH et al. Nearly Ideal Subthreshold Swing in Monolayer MoS Top-Gate nFETs with Scaled EOT of 1 nm. In 2022 International Electron Devices Meeting, IEDM 2022. Institute of Electrical and Electronics Engineers Inc. 2022. p. 741-744. (Technical Digest - International Electron Devices Meeting, IEDM). doi: 10.1109/IEDM45625.2022.10019552

Nearly Ideal Subthreshold Swing in Monolayer MoS Top-Gate nFETs with Scaled EOT of 1 nm

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