Near unity internal quantum efficiency and reliable vertical-cavity surface-emitting lasers

Wei Hao Huang*, Kai Lun Chi, Chun Tse Chang, Yin Hsiang Lin, Kai Sin Cho, Tien Chang Lu

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review


Vertical-cavity surface-emitting lasers (VCSELs) with low power consumption and high efficiency offer excellent characteristics for many applications. In this report, we design and demonstrate GaAs-based 940 nm VCSEL devices with different output mirror reflectivity values demonstrating slope efficiency from 0.97-1.16 (W/A) and show near unity internal quantum efficiency and low internal loss of 6.6 (cm-1) at room temperature by using WIN Semiconductor 6-inch GaAs VCSEL wafer foundry service. Furthermore, the high temperature reliability test results guarantee quite long equivalent 14.6 years of operating time and stability.

Original languageEnglish
Title of host publicationVertical-Cavity Surface-Emitting Lasers XXVII
EditorsChun Lei, Luke A. Graham
ISBN (Electronic)9781510659834
StatePublished - 2023
EventVertical-Cavity Surface-Emitting Lasers XXVII 2023 - San Francisco, United States
Duration: 1 Feb 20232 Feb 2023

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
ISSN (Print)0277-786X
ISSN (Electronic)1996-756X


ConferenceVertical-Cavity Surface-Emitting Lasers XXVII 2023
Country/TerritoryUnited States
CitySan Francisco


  • GaAs wafer foundry
  • internal quantum efficiency
  • reliability
  • Vertical-cavity surface-emitting lasers


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