Near-infrared femtosecond laser crystallized poly-Si thin film transistors

Yi Chao Wang; Jia Min Shieh; Hsiao-Wen Zan; Ci Ling Pan

doi:10.1364/OE.15.006982

Near-infrared femtosecond laser crystallized poly-Si thin film transistors

Yi Chao Wang, Jia Min Shieh, Hsiao-Wen Zan, Ci Ling Pan^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

Polycrystalline silicon (poly-Si) thin film transistors (TFTs) fabricated by near-infrared femtosecond laser annealing (FLA) are demonstrated. The FLA-annealed poly-Si channels exhibit low tail-state, deep-state, and midgap-state densities of grain traps. Characteristics such as field-effect mobility, threshold voltage, and subthreshold slope for FLA-annealed poly-TFTs are comparable to those of conventional approaches. A wide process window for annealing laser fluences was confirmed by examining the changes in electrical parameters for transistors with various channel dimensions.

Original language	English
Pages (from-to)	6982-6987
Number of pages	6
Journal	Optics Express
Volume	15
Issue number	11
DOIs	https://doi.org/10.1364/OE.15.006982
State	Published - 28 May 2007

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title = "Near-infrared femtosecond laser crystallized poly-Si thin film transistors",

abstract = "Polycrystalline silicon (poly-Si) thin film transistors (TFTs) fabricated by near-infrared femtosecond laser annealing (FLA) are demonstrated. The FLA-annealed poly-Si channels exhibit low tail-state, deep-state, and midgap-state densities of grain traps. Characteristics such as field-effect mobility, threshold voltage, and subthreshold slope for FLA-annealed poly-TFTs are comparable to those of conventional approaches. A wide process window for annealing laser fluences was confirmed by examining the changes in electrical parameters for transistors with various channel dimensions.",

author = "Wang, {Yi Chao} and Shieh, {Jia Min} and Hsiao-Wen Zan and Pan, {Ci Ling}",

year = "2007",

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AU - Wang, Yi Chao

AU - Shieh, Jia Min

AU - Zan, Hsiao-Wen

AU - Pan, Ci Ling

PY - 2007/5/28

Y1 - 2007/5/28

N2 - Polycrystalline silicon (poly-Si) thin film transistors (TFTs) fabricated by near-infrared femtosecond laser annealing (FLA) are demonstrated. The FLA-annealed poly-Si channels exhibit low tail-state, deep-state, and midgap-state densities of grain traps. Characteristics such as field-effect mobility, threshold voltage, and subthreshold slope for FLA-annealed poly-TFTs are comparable to those of conventional approaches. A wide process window for annealing laser fluences was confirmed by examining the changes in electrical parameters for transistors with various channel dimensions.

AB - Polycrystalline silicon (poly-Si) thin film transistors (TFTs) fabricated by near-infrared femtosecond laser annealing (FLA) are demonstrated. The FLA-annealed poly-Si channels exhibit low tail-state, deep-state, and midgap-state densities of grain traps. Characteristics such as field-effect mobility, threshold voltage, and subthreshold slope for FLA-annealed poly-TFTs are comparable to those of conventional approaches. A wide process window for annealing laser fluences was confirmed by examining the changes in electrical parameters for transistors with various channel dimensions.

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JO - Optics Express

JF - Optics Express

SN - 1094-4087

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ER -

Near-infrared femtosecond laser crystallized poly-Si thin film transistors

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