Abstract
Polycrystalline silicon (poly-Si) thin film transistors (TFTs) fabricated by near-infrared femtosecond laser annealing (FLA) are demonstrated. The FLA-annealed poly-Si channels exhibit low tail-state, deep-state, and midgap-state densities of grain traps. Characteristics such as field-effect mobility, threshold voltage, and subthreshold slope for FLA-annealed poly-TFTs are comparable to those of conventional approaches. A wide process window for annealing laser fluences was confirmed by examining the changes in electrical parameters for transistors with various channel dimensions.
Original language | English |
---|---|
Pages (from-to) | 6982-6987 |
Number of pages | 6 |
Journal | Optics Express |
Volume | 15 |
Issue number | 11 |
DOIs | |
State | Published - 28 May 2007 |