NBTI effects with different nitrogen dose implantation and regions were investigated. High nitrogen dose implantation in the channel or source/drain extension results in serious NBTI degradation. Both the dynamic NBTI effects and substrate hot holes effects were also discussed. DNBTI and ICP were measured simultaneously. Reduction of ΔVTH and ICP after positive gate bias stressing is related with the recovery of interface states.
|Number of pages||2|
|Journal||IEEE International Reliability Physics Symposium Proceedings|
|State||Published - 1 Jan 2004|
|Event||42nd Annual IEEE International Reliability Physics Symposium, IRPS 2004 - Phoenix, United States|
Duration: 25 Apr 2004 → 29 Apr 2004