NBTI effects of pMOSFETs with different nitrogen dose implantation

Y. J. Lee; Y. C. Tang; M. H. Wu; Tien-Sheng Chao; P. T. Ho; David Lai; W. L. Yang; T. Y. Huang

doi:10.1109/RELPHY.2004.1315449

NBTI effects of pMOSFETs with different nitrogen dose implantation

Y. J. Lee, Y. C. Tang, M. H. Wu, Tien-Sheng Chao, P. T. Ho, David Lai, W. L. Yang, T. Y. Huang

Department of Electrophysics

Research output: Contribution to journal › Conference article › peer-review

Abstract

NBTI effects with different nitrogen dose implantation and regions were investigated. High nitrogen dose implantation in the channel or source/drain extension results in serious NBTI degradation. Both the dynamic NBTI effects and substrate hot holes effects were also discussed. DNBTI and I_CP were measured simultaneously. Reduction of ΔV_TH and I_CP after positive gate bias stressing is related with the recovery of interface states.

Original language	English
Article number	1315449
Pages (from-to)	681-682
Number of pages	2
Journal	IEEE International Reliability Physics Symposium Proceedings
Volume	2004-January
Issue number	January
DOIs	https://doi.org/10.1109/RELPHY.2004.1315449
State	Published - 1 Jan 2004
Event	42nd Annual IEEE International Reliability Physics Symposium, IRPS 2004 - Phoenix, United States Duration: 25 Apr 2004 → 29 Apr 2004

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10.1109/RELPHY.2004.1315449

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@article{5d0ee692238e44e99ce9926f09595a2d,

title = "NBTI effects of pMOSFETs with different nitrogen dose implantation",

abstract = "NBTI effects with different nitrogen dose implantation and regions were investigated. High nitrogen dose implantation in the channel or source/drain extension results in serious NBTI degradation. Both the dynamic NBTI effects and substrate hot holes effects were also discussed. DNBTI and ICP were measured simultaneously. Reduction of ΔVTH and ICP after positive gate bias stressing is related with the recovery of interface states.",

author = "Lee, {Y. J.} and Tang, {Y. C.} and Wu, {M. H.} and Tien-Sheng Chao and Ho, {P. T.} and David Lai and Yang, {W. L.} and Huang, {T. Y.}",

year = "2004",

month = jan,

day = "1",

doi = "10.1109/RELPHY.2004.1315449",

language = "English",

volume = "2004-January",

pages = "681--682",

journal = "IEEE International Reliability Physics Symposium Proceedings",

issn = "1541-7026",

number = "January",

note = "42nd Annual IEEE International Reliability Physics Symposium, IRPS 2004 ; Conference date: 25-04-2004 Through 29-04-2004",

}

TY - JOUR

T1 - NBTI effects of pMOSFETs with different nitrogen dose implantation

AU - Lee, Y. J.

AU - Tang, Y. C.

AU - Wu, M. H.

AU - Chao, Tien-Sheng

AU - Ho, P. T.

AU - Lai, David

AU - Yang, W. L.

AU - Huang, T. Y.

PY - 2004/1/1

Y1 - 2004/1/1

N2 - NBTI effects with different nitrogen dose implantation and regions were investigated. High nitrogen dose implantation in the channel or source/drain extension results in serious NBTI degradation. Both the dynamic NBTI effects and substrate hot holes effects were also discussed. DNBTI and ICP were measured simultaneously. Reduction of ΔVTH and ICP after positive gate bias stressing is related with the recovery of interface states.

AB - NBTI effects with different nitrogen dose implantation and regions were investigated. High nitrogen dose implantation in the channel or source/drain extension results in serious NBTI degradation. Both the dynamic NBTI effects and substrate hot holes effects were also discussed. DNBTI and ICP were measured simultaneously. Reduction of ΔVTH and ICP after positive gate bias stressing is related with the recovery of interface states.

UR - http://www.scopus.com/inward/record.url?scp=68249153997&partnerID=8YFLogxK

U2 - 10.1109/RELPHY.2004.1315449

DO - 10.1109/RELPHY.2004.1315449

M3 - Conference article

AN - SCOPUS:3042511456

SN - 1541-7026

VL - 2004-January

SP - 681

EP - 682

JO - IEEE International Reliability Physics Symposium Proceedings

JF - IEEE International Reliability Physics Symposium Proceedings

IS - January

M1 - 1315449

T2 - 42nd Annual IEEE International Reliability Physics Symposium, IRPS 2004

Y2 - 25 April 2004 through 29 April 2004

ER -

NBTI effects of pMOSFETs with different nitrogen dose implantation

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