Natural substrate lift-off technique for vertical light-emitting diodes

Chia Yu Lee; Yu-Pin Lan; Po Min Tu; Shih Chieh Hsu; Chien-Chung Lin; Hao-Chung Kuo; Gou Chung Chi; Chun-Yen Chang

doi:10.7567/APEX.7.042103

Natural substrate lift-off technique for vertical light-emitting diodes

Chia Yu Lee, Yu-Pin Lan^*, Po Min Tu, Shih Chieh Hsu, Chien-Chung Lin, Hao-Chung Kuo, Gou Chung Chi, Chun-Yen Chang

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

Hexagonal inverted pyramid (HIP) structures and the natural substrate lift-off (NSLO) technique were demonstrated on a GaN-based vertical lightemitting diode (VLED). The HIP structures were formed at the interface between GaN and the sapphire substrate by molten KOH wet etching. The threading dislocation density (TDD) estimated by transmission electron microscopy (TEM) was reduced to 1 × 10⁸cm^-2. Raman spectroscopy indicated that the compressive strain from the bottom GaN/sapphire was effectively released through the HIP structure. With the adoption of the HIP structure and NSLO, the light output power and yield performance of leakage current could be further improved.

Original language	English
Article number	042103
Number of pages	4
Journal	Applied Physics Express
Volume	7
Issue number	4
DOIs	https://doi.org/10.7567/APEX.7.042103
State	Published - Apr 2014

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title = "Natural substrate lift-off technique for vertical light-emitting diodes",

abstract = "Hexagonal inverted pyramid (HIP) structures and the natural substrate lift-off (NSLO) technique were demonstrated on a GaN-based vertical lightemitting diode (VLED). The HIP structures were formed at the interface between GaN and the sapphire substrate by molten KOH wet etching. The threading dislocation density (TDD) estimated by transmission electron microscopy (TEM) was reduced to 1 × 108cm-2. Raman spectroscopy indicated that the compressive strain from the bottom GaN/sapphire was effectively released through the HIP structure. With the adoption of the HIP structure and NSLO, the light output power and yield performance of leakage current could be further improved.",

author = "Lee, {Chia Yu} and Yu-Pin Lan and Tu, {Po Min} and Hsu, {Shih Chieh} and Chien-Chung Lin and Hao-Chung Kuo and Chi, {Gou Chung} and Chun-Yen Chang",

year = "2014",

month = apr,

doi = "10.7567/APEX.7.042103",

language = "English",

volume = "7",

journal = "Applied Physics Express",

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T1 - Natural substrate lift-off technique for vertical light-emitting diodes

AU - Lee, Chia Yu

AU - Lan, Yu-Pin

AU - Tu, Po Min

AU - Hsu, Shih Chieh

AU - Lin, Chien-Chung

AU - Kuo, Hao-Chung

AU - Chi, Gou Chung

AU - Chang, Chun-Yen

PY - 2014/4

Y1 - 2014/4

N2 - Hexagonal inverted pyramid (HIP) structures and the natural substrate lift-off (NSLO) technique were demonstrated on a GaN-based vertical lightemitting diode (VLED). The HIP structures were formed at the interface between GaN and the sapphire substrate by molten KOH wet etching. The threading dislocation density (TDD) estimated by transmission electron microscopy (TEM) was reduced to 1 × 108cm-2. Raman spectroscopy indicated that the compressive strain from the bottom GaN/sapphire was effectively released through the HIP structure. With the adoption of the HIP structure and NSLO, the light output power and yield performance of leakage current could be further improved.

AB - Hexagonal inverted pyramid (HIP) structures and the natural substrate lift-off (NSLO) technique were demonstrated on a GaN-based vertical lightemitting diode (VLED). The HIP structures were formed at the interface between GaN and the sapphire substrate by molten KOH wet etching. The threading dislocation density (TDD) estimated by transmission electron microscopy (TEM) was reduced to 1 × 108cm-2. Raman spectroscopy indicated that the compressive strain from the bottom GaN/sapphire was effectively released through the HIP structure. With the adoption of the HIP structure and NSLO, the light output power and yield performance of leakage current could be further improved.

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U2 - 10.7567/APEX.7.042103

DO - 10.7567/APEX.7.042103

M3 - Article

AN - SCOPUS:84904637455

SN - 1882-0778

VL - 7

JO - Applied Physics Express

JF - Applied Physics Express

IS - 4

M1 - 042103

ER -

Natural substrate lift-off technique for vertical light-emitting diodes

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