Narrow-width effect on high-frequency performance and RF noise of sub-40-nm multifinger nMOSFETs and pMOSFETs

Kuo Liang Yeh; Jyh-Chyurn Guo

doi:10.1109/TED.2012.2228196

Narrow-width effect on high-frequency performance and RF noise of sub-40-nm multifinger nMOSFETs and pMOSFETs

Kuo Liang Yeh^*, Jyh-Chyurn Guo

^*Corresponding author for this work

Institute of Electronics

Research output: Contribution to journal › Article › peer-review

31 Scopus citations

Abstract

The impact of narrow-width effects on high-frequency performance like f_T, f_MAX, and RF noise parameters, such as NF _min and R_n, in sub-40-nm multifinger CMOS devices is investigated in this paper. Narrow-oxide-diffusion (OD) MOSFET with smaller finger width and larger finger number can achieve lower R_g and higher f_MAX. However, these narrow-OD devices suffer f_T degradation and higher NF_min, even with the advantage of lower R _g. The mechanisms responsible for the tradeoff between different parameters will be presented to provide an important guideline of multifinger MOSFET layout for RF circuit design using nanoscale CMOS technology.

Original language	English
Article number	6381483
Pages (from-to)	109-116
Number of pages	8
Journal	IEEE Transactions on Electron Devices
Volume	60
Issue number	1
DOIs	https://doi.org/10.1109/TED.2012.2228196
State	Published - 7 Jan 2013

Keywords

f
f
multifinger
nanoscale CMOS
narrow width
NF
R
RF noise

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10.1109/TED.2012.2228196

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abstract = "The impact of narrow-width effects on high-frequency performance like fT, fMAX, and RF noise parameters, such as NF min and Rn, in sub-40-nm multifinger CMOS devices is investigated in this paper. Narrow-oxide-diffusion (OD) MOSFET with smaller finger width and larger finger number can achieve lower Rg and higher fMAX. However, these narrow-OD devices suffer fT degradation and higher NFmin, even with the advantage of lower R g. The mechanisms responsible for the tradeoff between different parameters will be presented to provide an important guideline of multifinger MOSFET layout for RF circuit design using nanoscale CMOS technology.",

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AB - The impact of narrow-width effects on high-frequency performance like fT, fMAX, and RF noise parameters, such as NF min and Rn, in sub-40-nm multifinger CMOS devices is investigated in this paper. Narrow-oxide-diffusion (OD) MOSFET with smaller finger width and larger finger number can achieve lower Rg and higher fMAX. However, these narrow-OD devices suffer fT degradation and higher NFmin, even with the advantage of lower R g. The mechanisms responsible for the tradeoff between different parameters will be presented to provide an important guideline of multifinger MOSFET layout for RF circuit design using nanoscale CMOS technology.

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Narrow-width effect on high-frequency performance and RF noise of sub-40-nm multifinger nMOSFETs and pMOSFETs

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Keywords

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