Narrow-band band-pass filters on silicon substrates at 30 GHz

D. S. Yu; C. F. Cheng; K. T. Chan; Albert Chin; S. P. McAlister; C. Zhu; M. F. Li; D. L. Kwong

doi:10.1109/MWSYM.2004.1338850

Narrow-band band-pass filters on silicon substrates at 30 GHz

D. S. Yu^*, C. F. Cheng, K. T. Chan, Albert Chin, S. P. McAlister, C. Zhu, M. F. Li, D. L. Kwong

^*Corresponding author for this work

Research output: Contribution to journal › Conference article › peer-review

22 Scopus citations

Abstract

Using optimized ion implantation, we have fabricated high performance 2-pole and 3-pole CPW filters on Si substrates at ∼30 GHz, with very narrow 1.0 (3.1%) GHz and 0.75 (2.5%) GHz pass-band as well as small insertion loss. Microstrip filters en Si show small 3,2 dB loss at 27 GHz, which has smaller size than CPW case without the large coplanar ground planes. In contrast, the non-implanted filters failed due to the high substrate loss.

Original language	English
Pages (from-to)	1467-1470
Number of pages	4
Journal	IEEE MTT-S International Microwave Symposium Digest
Volume	3
DOIs	https://doi.org/10.1109/MWSYM.2004.1338850
State	Published - 2004
Event	2004 IEEE MITT-S International Microwave Symposium Digest - Fort Worth, TX, United States Duration: 6 Jun 2004 → 11 Jun 2004

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@article{884ca849979544f188c5f730bf10b5f5,

title = "Narrow-band band-pass filters on silicon substrates at 30 GHz",

abstract = "Using optimized ion implantation, we have fabricated high performance 2-pole and 3-pole CPW filters on Si substrates at ∼30 GHz, with very narrow 1.0 (3.1%) GHz and 0.75 (2.5%) GHz pass-band as well as small insertion loss. Microstrip filters en Si show small 3,2 dB loss at 27 GHz, which has smaller size than CPW case without the large coplanar ground planes. In contrast, the non-implanted filters failed due to the high substrate loss.",

author = "Yu, {D. S.} and Cheng, {C. F.} and Chan, {K. T.} and Albert Chin and McAlister, {S. P.} and C. Zhu and Li, {M. F.} and Kwong, {D. L.}",

year = "2004",

doi = "10.1109/MWSYM.2004.1338850",

language = "English",

volume = "3",

pages = "1467--1470",

journal = "IEEE MTT-S International Microwave Symposium Digest",

issn = "0149-645X",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "2004 IEEE MITT-S International Microwave Symposium Digest ; Conference date: 06-06-2004 Through 11-06-2004",

}

TY - JOUR

T1 - Narrow-band band-pass filters on silicon substrates at 30 GHz

AU - Yu, D. S.

AU - Cheng, C. F.

AU - Chan, K. T.

AU - Chin, Albert

AU - McAlister, S. P.

AU - Zhu, C.

AU - Li, M. F.

AU - Kwong, D. L.

PY - 2004

Y1 - 2004

N2 - Using optimized ion implantation, we have fabricated high performance 2-pole and 3-pole CPW filters on Si substrates at ∼30 GHz, with very narrow 1.0 (3.1%) GHz and 0.75 (2.5%) GHz pass-band as well as small insertion loss. Microstrip filters en Si show small 3,2 dB loss at 27 GHz, which has smaller size than CPW case without the large coplanar ground planes. In contrast, the non-implanted filters failed due to the high substrate loss.

AB - Using optimized ion implantation, we have fabricated high performance 2-pole and 3-pole CPW filters on Si substrates at ∼30 GHz, with very narrow 1.0 (3.1%) GHz and 0.75 (2.5%) GHz pass-band as well as small insertion loss. Microstrip filters en Si show small 3,2 dB loss at 27 GHz, which has smaller size than CPW case without the large coplanar ground planes. In contrast, the non-implanted filters failed due to the high substrate loss.

UR - http://www.scopus.com/inward/record.url?scp=4544363342&partnerID=8YFLogxK

U2 - 10.1109/MWSYM.2004.1338850

DO - 10.1109/MWSYM.2004.1338850

M3 - Conference article

AN - SCOPUS:4544363342

SN - 0149-645X

VL - 3

SP - 1467

EP - 1470

JO - IEEE MTT-S International Microwave Symposium Digest

JF - IEEE MTT-S International Microwave Symposium Digest

T2 - 2004 IEEE MITT-S International Microwave Symposium Digest

Y2 - 6 June 2004 through 11 June 2004

ER -

Narrow-band band-pass filters on silicon substrates at 30 GHz

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