Abstract
In this chapter, we use nanotechnology to achieve high efficiency light emitting diodes (LEDs) and enhance crystal quality of epitaxial layer. We also adapt nanotechnology to enhance our LED devices: SiO2 nanorod-array patterned sapphire substrate (NAPSS), native grown GaN nanopillar, and embedded SiO2 nanomask etched nanopillar. Thus, we can achieve high crystal quality and fabrication of high-performance LED devices. We hope using novel nanotechnology will be effective in improving the quality of GaN-based optoelectronic devices in future.
Original language | English |
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Title of host publication | Nitride Semiconductor Light-Emitting Diodes (LEDs) |
Subtitle of host publication | Materials, Technologies, and Applications: Second Edition |
Publisher | Elsevier |
Pages | 243-271 |
Number of pages | 29 |
ISBN (Electronic) | 9780081019436 |
ISBN (Print) | 9780081019429 |
DOIs | |
State | Published - 2018 |
Keywords
- GaN
- Light emitting diodes
- Nanotechnology