Nanoscale 2-bit/cell HfO 2 nanocrystal flash memory

Yu Hsien Lin*, Chao-Hsin Chien

*Corresponding author for this work

    Research output: Contribution to journalArticlepeer-review

    8 Scopus citations


    In this paper, we demonstrate 50-nm trigate nonvolatile HfO 2 nanocrystal memory devices on silicon-on-insulator wafers. The proposed technique, which is fully compatible with current CMOS technologies, is used to form highly localized HfO 2 nanocrystals for application in nonvolatile flash memory. We successfully scale down conventional nonvolatile floating gate memories below the 50-nm node to achieve nanodevices for application in next-generation nonvolatile memories.

    Original languageEnglish
    Article number6099626
    Pages (from-to)412-417
    Number of pages6
    JournalIEEE Transactions on Nanotechnology
    Issue number2
    StatePublished - 1 Mar 2012


    • Flash memory
    • hafnium oxide
    • nanocrystals
    • nonvolatile memories


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