Nanoscale 2-bit/cell HfO 2 nanocrystal flash memory

Yu Hsien Lin; Chao-Hsin Chien

doi:10.1109/TNANO.2011.2179062

Nanoscale 2-bit/cell HfO ₂ nanocrystal flash memory

Yu Hsien Lin^*, Chao-Hsin Chien

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

In this paper, we demonstrate 50-nm trigate nonvolatile HfO ₂ nanocrystal memory devices on silicon-on-insulator wafers. The proposed technique, which is fully compatible with current CMOS technologies, is used to form highly localized HfO ₂ nanocrystals for application in nonvolatile flash memory. We successfully scale down conventional nonvolatile floating gate memories below the 50-nm node to achieve nanodevices for application in next-generation nonvolatile memories.

Original language	English
Article number	6099626
Pages (from-to)	412-417
Number of pages	6
Journal	IEEE Transactions on Nanotechnology
Volume	11
Issue number	2
DOIs	https://doi.org/10.1109/TNANO.2011.2179062
State	Published - 1 Mar 2012

Keywords

Flash memory
hafnium oxide
nanocrystals
nonvolatile memories

Access to Document

10.1109/TNANO.2011.2179062

Cite this

@article{55c68cdaefcd4e10a7546dfc938b402b,

title = "Nanoscale 2-bit/cell HfO 2 nanocrystal flash memory",

abstract = "In this paper, we demonstrate 50-nm trigate nonvolatile HfO 2 nanocrystal memory devices on silicon-on-insulator wafers. The proposed technique, which is fully compatible with current CMOS technologies, is used to form highly localized HfO 2 nanocrystals for application in nonvolatile flash memory. We successfully scale down conventional nonvolatile floating gate memories below the 50-nm node to achieve nanodevices for application in next-generation nonvolatile memories.",

keywords = "Flash memory, hafnium oxide, nanocrystals, nonvolatile memories",

author = "Lin, {Yu Hsien} and Chao-Hsin Chien",

year = "2012",

month = mar,

day = "1",

doi = "10.1109/TNANO.2011.2179062",

language = "English",

volume = "11",

pages = "412--417",

journal = "IEEE Transactions on Nanotechnology",

issn = "1536-125X",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "2",

}

TY - JOUR

T1 - Nanoscale 2-bit/cell HfO 2 nanocrystal flash memory

AU - Lin, Yu Hsien

AU - Chien, Chao-Hsin

PY - 2012/3/1

Y1 - 2012/3/1

N2 - In this paper, we demonstrate 50-nm trigate nonvolatile HfO 2 nanocrystal memory devices on silicon-on-insulator wafers. The proposed technique, which is fully compatible with current CMOS technologies, is used to form highly localized HfO 2 nanocrystals for application in nonvolatile flash memory. We successfully scale down conventional nonvolatile floating gate memories below the 50-nm node to achieve nanodevices for application in next-generation nonvolatile memories.

AB - In this paper, we demonstrate 50-nm trigate nonvolatile HfO 2 nanocrystal memory devices on silicon-on-insulator wafers. The proposed technique, which is fully compatible with current CMOS technologies, is used to form highly localized HfO 2 nanocrystals for application in nonvolatile flash memory. We successfully scale down conventional nonvolatile floating gate memories below the 50-nm node to achieve nanodevices for application in next-generation nonvolatile memories.

KW - Flash memory

KW - hafnium oxide

KW - nanocrystals

KW - nonvolatile memories

UR - http://www.scopus.com/inward/record.url?scp=84863377693&partnerID=8YFLogxK

U2 - 10.1109/TNANO.2011.2179062

DO - 10.1109/TNANO.2011.2179062

M3 - Article

AN - SCOPUS:84863377693

SN - 1536-125X

VL - 11

SP - 412

EP - 417

JO - IEEE Transactions on Nanotechnology

JF - IEEE Transactions on Nanotechnology

IS - 2

M1 - 6099626

ER -

Nanoscale 2-bit/cell HfO ₂ nanocrystal flash memory

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this