Nanometer-scale patterning on titanium thin film with local oxidation of scanning probe microscope

Jeng-Tzong Sheu, S. P. Yeh, C. H. Wu, K. S. You

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations


Nanometer-scale oxidized patterns were fabricated on titanium (Ti) films deposited on silicon wafer using an atomic force microscope (AFM) based field-induced oxidation process. Titanium surfaces can be oxidized at room temperature under ambient conditions with the tip of an atomic force microscope when applying a negative bias voltage between surface and tip. We determined that the size of the oxide patterns was dependent on tip-bias voltages, scanning speed, and relative humidity. We found that the attainable oxide features of titanium patterns were improved by increasing the scanning speed, tip-bias voltage and also by lowering the relative humidity. Fabrication of nanometer-scale structures on the Ti-metal film by AFM-based field-induced oxidation and subsequent chemical wet etching of the titanium in a dilute hydrofluoric acid (HF) was demonstrated. Patterns of Ti lines below 100 nm in width were successfully fabricated by the above-described method.

Original languageEnglish
Title of host publicationProceedings of the 2002 2nd IEEE Conference on Nanotechnology, IEEE-NANO 2002
PublisherIEEE Computer Society
Number of pages5
ISBN (Electronic)0780375386
StatePublished - 1 Jan 2002
Event2nd IEEE Conference on Nanotechnology, IEEE-NANO 2002 - Washington, United States
Duration: 26 Aug 200228 Aug 2002

Publication series

NameProceedings of the IEEE Conference on Nanotechnology
ISSN (Print)1944-9399
ISSN (Electronic)1944-9380


Conference2nd IEEE Conference on Nanotechnology, IEEE-NANO 2002
Country/TerritoryUnited States


  • Atomic force microscopy
  • Atomic layer deposition
  • Humidity
  • Oxidation
  • Probes
  • Semiconductor films
  • Silicon
  • Titanium
  • Transistors
  • Voltage


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