Nanometer-scale conversion of Si3N4 to SiOx

F. S.S. Chien; J. W. Chang; S. W. Lin; Y. C. Chou; T. T. Chen; S. Gwo; Tien-Sheng Chao; W. F. Hsieh

doi:10.1063/1.125754

Nanometer-scale conversion of Si₃N₄ to SiO_x

F. S.S. Chien, J. W. Chang, S. W. Lin, Y. C. Chou, T. T. Chen, S. Gwo^*, Tien-Sheng Chao, W. F. Hsieh

^*Corresponding author for this work

Department of Electrophysics

Research output: Contribution to journal › Article › peer-review

84 Scopus citations

Abstract

It has been found that atomic force microscope (AFM) induced local oxidation is an effective way for converting thin (<5 nm) Si₃N₄ films to SiO_x. The threshold voltage for the 4.2 nm film is as low as 5 V and the initial growth rate is on the order of 10³ nm/s at 10 V. Micro-Auger analysis of the selectively oxidized region revealed the formation of SiO_x. Due to the large chemical selectivity in various etchants and great thermal oxidation rate difference between Si₃N₄, SiO₂, and Si, AFM patterning of Si₃N₄ films can be a promising method for fabricating nanoscale structures.

Original language	English
Pages (from-to)	360-362
Number of pages	3
Journal	Applied Physics Letters
Volume	76
Issue number	3
DOIs	https://doi.org/10.1063/1.125754
State	Published - 17 Jan 2000

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title = "Nanometer-scale conversion of Si3N4 to SiOx",

abstract = "It has been found that atomic force microscope (AFM) induced local oxidation is an effective way for converting thin (<5 nm) Si3N4 films to SiOx. The threshold voltage for the 4.2 nm film is as low as 5 V and the initial growth rate is on the order of 103 nm/s at 10 V. Micro-Auger analysis of the selectively oxidized region revealed the formation of SiOx. Due to the large chemical selectivity in various etchants and great thermal oxidation rate difference between Si3N4, SiO2, and Si, AFM patterning of Si3N4 films can be a promising method for fabricating nanoscale structures.",

author = "Chien, {F. S.S.} and Chang, {J. W.} and Lin, {S. W.} and Chou, {Y. C.} and Chen, {T. T.} and S. Gwo and Tien-Sheng Chao and Hsieh, {W. F.}",

year = "2000",

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pages = "360--362",

journal = "Applied Physics Letters",

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T1 - Nanometer-scale conversion of Si3N4 to SiOx

AU - Chien, F. S.S.

AU - Chang, J. W.

AU - Lin, S. W.

AU - Chou, Y. C.

AU - Chen, T. T.

AU - Gwo, S.

AU - Chao, Tien-Sheng

AU - Hsieh, W. F.

PY - 2000/1/17

Y1 - 2000/1/17

N2 - It has been found that atomic force microscope (AFM) induced local oxidation is an effective way for converting thin (<5 nm) Si3N4 films to SiOx. The threshold voltage for the 4.2 nm film is as low as 5 V and the initial growth rate is on the order of 103 nm/s at 10 V. Micro-Auger analysis of the selectively oxidized region revealed the formation of SiOx. Due to the large chemical selectivity in various etchants and great thermal oxidation rate difference between Si3N4, SiO2, and Si, AFM patterning of Si3N4 films can be a promising method for fabricating nanoscale structures.

AB - It has been found that atomic force microscope (AFM) induced local oxidation is an effective way for converting thin (<5 nm) Si3N4 films to SiOx. The threshold voltage for the 4.2 nm film is as low as 5 V and the initial growth rate is on the order of 103 nm/s at 10 V. Micro-Auger analysis of the selectively oxidized region revealed the formation of SiOx. Due to the large chemical selectivity in various etchants and great thermal oxidation rate difference between Si3N4, SiO2, and Si, AFM patterning of Si3N4 films can be a promising method for fabricating nanoscale structures.

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DO - 10.1063/1.125754

M3 - Article

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VL - 76

SP - 360

EP - 362

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 3

ER -

Nanometer-scale conversion of Si₃N₄ to SiO_x

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