Nanomechanical, structural, and transport properties of Bi3Se2Te thin films

Phuoc Huu Le, Shao Pin Chiu, Sheng Rui Jian*, Chih-Wei Luo, Jiunn-Yuan Lin, Juhn-Jong Lin, Kaung-Hsiung Wu, M. Gospodinov

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

18 Scopus citations

Abstract

New ternary phase of Bi3Se2Te thin films were successfully grown through pulsed laser deposition with a single Bi2Se2Te crystal as the target. Bi-rich and Se- and Te-deficient compositions deposited at a substrate temperature (Ts) of 250°C and helium gas pressures (PHe) ranging from 2.0 × 10-5 to 6.5 × 10-1 Torr aided the formation of the dominant Bi-rich phase: Bi3Se2Te. The films were grown epitaxially on Al2O3 (001) substrates with Bi3Se2Te [001]//Al2O3 [001] and Bi3Se2Te [110]//Al2O3 [210]. An increase in PHe remarkably enhanced the hardness and Young's modulus of the films, primarily because of the decrease in nanograin size, following the Hall-Petch relationship. Moreover, the Bi3Se2Te films present linear magnetoresistance under a high perpendicular magnetic field (B ≥ 4 T) and two-dimensional weak antilocalization effect under a low B (±1 T) which may be attributed to topological insulator surface state (TSS). Clearly, further theoretical calculations and experiments are needed to confirm the suggested interpretation.

Original languageEnglish
Pages (from-to)350-357
Number of pages8
JournalJournal of Alloys and Compounds
Volume679
DOIs
StatePublished - 15 Sep 2016

Keywords

  • Topological insulator
  • Bi3Se2Te
  • Nanoindentation
  • Weak antilocalization (WAL)
  • Pulsed laser deposition (PLD)
  • THERMOELECTRIC PROPERTIES
  • SURFACE-STATES
  • MECHANICAL CHARACTERIZATION
  • QUANTUM OSCILLATIONS
  • DIRAC FERMIONS
  • NANOINDENTATION
  • INSULATOR
  • MAGNETORESISTANCE
  • DEFORMATION
  • COATINGS

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