Nanoflash device with self-aligned double floating gates using scanning probe lithography and tetramethylammonium hydroxide wet etching

Keyphrases

• Silicon Nanowires (SiNWs) 100%
• Self-aligned Double 100%
• Wet Etching 100%
• Scanning Probe Lithography 100%
• Floating Gate 100%
• Tetramethylammonium Hydroxide 100%
• Self-aligned 40%
• Side Gate 40%
• Silicon Nitride 20%
• Low Pressure Chemical Vapor Deposition (LPCVD) 20%
• Polysilicon 20%
• Reactive Ion Etching 20%
• Nanostructures 20%
• Lithography Technology 20%
• Photolithography 20%
• Sidewall 20%
• Gate Dielectric 20%
• Electrical Properties 20%
• Hydroxide Solution 20%
• Silicon Wafer 20%
• Local Oxidation 20%
• Nanowire Channel 20%
• Top Gate 20%
• Polysilicon Film 20%
• Anisotropic Wet Etching 20%
• Anisotropic Etching 20%
• Aluminum Pad 20%

Material Science

• Lithography 100%
• Silicon 100%
• Nanowire 100%
• Wet Etching 100%
• Reactive Ion Etching 20%
• Film 20%
• Silicon Nitride 20%
• Low Pressure Chemical Vapor Deposition 20%
• Oxidation Reaction 20%
• Aluminum 20%
• Silicon Wafer 20%
• Anisotropic Etching 20%
• Nanostructure 20%
• Dielectric Material 20%