N-type Schottky barrier source/drain MOSFET using Ytterbium silicide

Shiyang Zhu; Jingde Chen; M. F. Li; S. J. Lee; Jagar Singh; C. X. Zhu; Anyan Du; C. H. Tung; Albert Chin; D. L. Kwong

doi:10.1109/LED.2004.831582

N-type Schottky barrier source/drain MOSFET using Ytterbium silicide

Shiyang Zhu^*, Jingde Chen, M. F. Li, S. J. Lee, Jagar Singh, C. X. Zhu, Anyan Du, C. H. Tung, Albert Chin, D. L. Kwong

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

209 Scopus citations

Abstract

Ytterbium silicide, for the first time, was used to form the Schottky barrier source/drain (S/D) of N-channel MOSFETs. The device fabrication was performed at low temperature, wich is highly preferred in the establishment of Schottky barrier S/D transistor (SSDT) technology, including the HfO₂ gate dielectric, and HaN/TaN metal gate. The YbSi_2-x silicided N-SSDT has demonstrated a very promising characteristic with a recorded high I_on/I_off ratio of ∼10⁷ and a steep subthreshold slope of 75 mV/dec, which is attributed to the lower electron barrier height and better film morphology of the YbSi_2-x/Si contact compared with other self-aligned rare earth metal-(Erbium, Terbium, Dysprosium) silicided Schottky junctions.

Original language	English
Pages (from-to)	565-567
Number of pages	3
Journal	Ieee Electron Device Letters
Volume	25
Issue number	8
DOIs	https://doi.org/10.1109/LED.2004.831582
State	Published - Aug 2004

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title = "N-type Schottky barrier source/drain MOSFET using Ytterbium silicide",

abstract = "Ytterbium silicide, for the first time, was used to form the Schottky barrier source/drain (S/D) of N-channel MOSFETs. The device fabrication was performed at low temperature, wich is highly preferred in the establishment of Schottky barrier S/D transistor (SSDT) technology, including the HfO2 gate dielectric, and HaN/TaN metal gate. The YbSi2-x silicided N-SSDT has demonstrated a very promising characteristic with a recorded high Ion/Ioff ratio of ∼107 and a steep subthreshold slope of 75 mV/dec, which is attributed to the lower electron barrier height and better film morphology of the YbSi2-x/Si contact compared with other self-aligned rare earth metal-(Erbium, Terbium, Dysprosium) silicided Schottky junctions.",

author = "Shiyang Zhu and Jingde Chen and Li, {M. F.} and Lee, {S. J.} and Jagar Singh and Zhu, {C. X.} and Anyan Du and Tung, {C. H.} and Albert Chin and Kwong, {D. L.}",

year = "2004",

month = aug,

doi = "10.1109/LED.2004.831582",

language = "English",

volume = "25",

pages = "565--567",

journal = "Ieee Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "8",

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TY - JOUR

T1 - N-type Schottky barrier source/drain MOSFET using Ytterbium silicide

AU - Zhu, Shiyang

AU - Chen, Jingde

AU - Li, M. F.

AU - Lee, S. J.

AU - Singh, Jagar

AU - Zhu, C. X.

AU - Du, Anyan

AU - Tung, C. H.

AU - Chin, Albert

AU - Kwong, D. L.

PY - 2004/8

Y1 - 2004/8

N2 - Ytterbium silicide, for the first time, was used to form the Schottky barrier source/drain (S/D) of N-channel MOSFETs. The device fabrication was performed at low temperature, wich is highly preferred in the establishment of Schottky barrier S/D transistor (SSDT) technology, including the HfO2 gate dielectric, and HaN/TaN metal gate. The YbSi2-x silicided N-SSDT has demonstrated a very promising characteristic with a recorded high Ion/Ioff ratio of ∼107 and a steep subthreshold slope of 75 mV/dec, which is attributed to the lower electron barrier height and better film morphology of the YbSi2-x/Si contact compared with other self-aligned rare earth metal-(Erbium, Terbium, Dysprosium) silicided Schottky junctions.

AB - Ytterbium silicide, for the first time, was used to form the Schottky barrier source/drain (S/D) of N-channel MOSFETs. The device fabrication was performed at low temperature, wich is highly preferred in the establishment of Schottky barrier S/D transistor (SSDT) technology, including the HfO2 gate dielectric, and HaN/TaN metal gate. The YbSi2-x silicided N-SSDT has demonstrated a very promising characteristic with a recorded high Ion/Ioff ratio of ∼107 and a steep subthreshold slope of 75 mV/dec, which is attributed to the lower electron barrier height and better film morphology of the YbSi2-x/Si contact compared with other self-aligned rare earth metal-(Erbium, Terbium, Dysprosium) silicided Schottky junctions.

UR - http://www.scopus.com/inward/record.url?scp=3943066406&partnerID=8YFLogxK

U2 - 10.1109/LED.2004.831582

DO - 10.1109/LED.2004.831582

M3 - Article

AN - SCOPUS:3943066406

SN - 0741-3106

VL - 25

SP - 565

EP - 567

JO - Ieee Electron Device Letters

JF - Ieee Electron Device Letters

IS - 8

ER -

N-type Schottky barrier source/drain MOSFET using Ytterbium silicide

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