In this paper, the multi-level memory system using error control codes has been proposed. As compared with other approaches for 2m-level memory cells, our proposal features an effective grouping of several q-level memory cells with q > 2m in order to create parity bits of error control codes. Therefore, the proposed methodology can enhance both the yield and reliability without area penalty for multilevel memory systems. The BCH (72,64) code of correcting single error is presented for 5-level memory cells. In contrast to 22-level memory cells, our proposal can improve yields from 61.58% to 99.92% for 16Mbit and make the mass production of 1Gbit memory practicable under the approximated model for StrataFlash™. Since our work was motivated from the use of q-level cells in substitution for 2 m-level cells, not only multi-level flash memory, but also multi-level DRAM systems, can both benefit from our proposed methodology.
|Proceedings - IEEE International Symposium on Circuits and Systems
|Published - 7 Sep 2004
|2004 IEEE International Symposium on Cirquits and Systems - Proceedings - Vancouver, BC, Canada
Duration: 23 May 2004 → 26 May 2004