Multi-layered MoS2 film formed by high-temperature sputtering for enhancement-mode nMOSFETs

Takumi Ohashi*, Kohei Suda, Seiya Ishihara, Naomi Sawamoto, Shimpei Yamaguchi, Kentaro Matsuura, Kuniyuki Kakushima, Nobuyuki Sugii, Akira Nishiyama, Yoshinori Kataoka, Kenji Natori, Kazuo Tsutsui, Hiroshi Iwai, Atsushi Ogura, Hitoshi Wakabayashi

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

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Engineering & Materials Science

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