Multi-Gbps Tri-Band 28/38/60-GHz CMOS Transmitter for Millimeter-Wave Radio System-on-Chip

David Del Rio, Daekeun Yoon, Fan Ta Chen, Yan Zhang, Chia Jen Liang, Ching Wen Chiang, Mau Chung Frank Chang, Yen Cheng Kuan

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

    3 Scopus citations

    Abstract

    This paper presents the design of a novel tri-band 28-nm CMOS transmitter for the 28, 38 and 60-GHz mm-wave bands. It consists of a 4-stage power amplifier preceded by a wideband active mixer. The PA employs wideband enhancing techniques and low-loss switches to achieve the tri-band operation, as well as a linearization loop to enhance the OP1dB by more than 3.5 dB. The PA exhibits a measured gain of 22/23/12 dB in the 3 bands and a Psat higher than 10 dBm. The transmitter CG is 10/15/4 dB and it is capable of transmitting a 1.5-Gbps modulated signal. The PA and the transmitter consume 430 and 431 mW of DC power and occupy 0.87 and 1.14 mm, respectively.

    Original languageEnglish
    Title of host publication2019 IEEE MTT-S International Microwave Symposium, IMS 2019
    PublisherInstitute of Electrical and Electronics Engineers Inc.
    Pages488-491
    Number of pages4
    ISBN (Electronic)9781728113098
    DOIs
    StatePublished - 1 Jun 2019
    Event2019 IEEE MTT-S International Microwave Symposium, IMS 2019 - Boston, United States
    Duration: 2 Jun 20197 Jun 2019

    Publication series

    NameIEEE MTT-S International Microwave Symposium Digest
    Volume2019-June
    ISSN (Print)0149-645X

    Conference

    Conference2019 IEEE MTT-S International Microwave Symposium, IMS 2019
    Country/TerritoryUnited States
    CityBoston
    Period2/06/197/06/19

    Keywords

    • 5G
    • CMOS integrated circuits
    • millimeter wave integrated circuits
    • mixers
    • power amplifiers

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