Multi-bit-per-Cell a-IGZO TFT resistive-switching memory for system-on-plastic applications

Shih Chieh Wu; Hsien Tsung Feng; Ming Jiue Yu; I. Ting Wang; Tuo-Hung Hou

doi:10.1109/IEDM.2012.6478983

Multi-bit-per-Cell a-IGZO TFT resistive-switching memory for system-on-plastic applications

Shih Chieh Wu^*, Hsien Tsung Feng, Ming Jiue Yu, I. Ting Wang, Tuo-Hung Hou

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

5 Scopus citations

Abstract

We reported a novel flexible nonvolatile memory using complete logic-compatible a-IGZO TFTs fabricated at room temperature. The memory device utilized localized and independent resistive switching for high-density two-bit-per-cell and multi-bit-per-cell operations. Combining low-temperature fabrication, low-cost integration, high bit-density, and excellent flexible memory characteristics, this device shows promise for future system-on-plastic applications.

Original language	English
Title of host publication	2012 IEEE International Electron Devices Meeting, IEDM 2012
Pages	5.3.1-5.3.4
Number of pages	4
DOIs	https://doi.org/10.1109/IEDM.2012.6478983
State	Published - 10 Dec 2012
Event	2012 IEEE International Electron Devices Meeting, IEDM 2012 - San Francisco, CA, United States Duration: 10 Dec 2012 → 13 Dec 2012

Publication series

Name	Technical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)	0163-1918

Conference

Conference	2012 IEEE International Electron Devices Meeting, IEDM 2012
Country/Territory	United States
City	San Francisco, CA
Period	10/12/12 → 13/12/12

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10.1109/IEDM.2012.6478983

Cite this

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title = "Multi-bit-per-Cell a-IGZO TFT resistive-switching memory for system-on-plastic applications",

abstract = "We reported a novel flexible nonvolatile memory using complete logic-compatible a-IGZO TFTs fabricated at room temperature. The memory device utilized localized and independent resistive switching for high-density two-bit-per-cell and multi-bit-per-cell operations. Combining low-temperature fabrication, low-cost integration, high bit-density, and excellent flexible memory characteristics, this device shows promise for future system-on-plastic applications.",

author = "Wu, {Shih Chieh} and Feng, {Hsien Tsung} and Yu, {Ming Jiue} and Wang, {I. Ting} and Tuo-Hung Hou",

year = "2012",

month = dec,

day = "10",

doi = "10.1109/IEDM.2012.6478983",

language = "English",

isbn = "9781467348706",

series = "Technical Digest - International Electron Devices Meeting, IEDM",

pages = "5.3.1--5.3.4",

booktitle = "2012 IEEE International Electron Devices Meeting, IEDM 2012",

note = "2012 IEEE International Electron Devices Meeting, IEDM 2012 ; Conference date: 10-12-2012 Through 13-12-2012",

}

Wu, SC, Feng, HT, Yu, MJ, Wang, IT & Hou, T-H 2012, Multi-bit-per-Cell a-IGZO TFT resistive-switching memory for system-on-plastic applications. in 2012 IEEE International Electron Devices Meeting, IEDM 2012., 6478983, Technical Digest - International Electron Devices Meeting, IEDM, pp. 5.3.1-5.3.4, 2012 IEEE International Electron Devices Meeting, IEDM 2012, San Francisco, CA, United States, 10/12/12. https://doi.org/10.1109/IEDM.2012.6478983

Multi-bit-per-Cell a-IGZO TFT resistive-switching memory for system-on-plastic applications. / Wu, Shih Chieh; Feng, Hsien Tsung; Yu, Ming Jiue et al.
2012 IEEE International Electron Devices Meeting, IEDM 2012. 2012. p. 5.3.1-5.3.4 6478983 (Technical Digest - International Electron Devices Meeting, IEDM).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Wu, Shih Chieh

AU - Feng, Hsien Tsung

AU - Yu, Ming Jiue

AU - Wang, I. Ting

AU - Hou, Tuo-Hung

PY - 2012/12/10

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AB - We reported a novel flexible nonvolatile memory using complete logic-compatible a-IGZO TFTs fabricated at room temperature. The memory device utilized localized and independent resistive switching for high-density two-bit-per-cell and multi-bit-per-cell operations. Combining low-temperature fabrication, low-cost integration, high bit-density, and excellent flexible memory characteristics, this device shows promise for future system-on-plastic applications.

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DO - 10.1109/IEDM.2012.6478983

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T3 - Technical Digest - International Electron Devices Meeting, IEDM

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BT - 2012 IEEE International Electron Devices Meeting, IEDM 2012

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Y2 - 10 December 2012 through 13 December 2012

ER -

Multi-bit-per-Cell a-IGZO TFT resistive-switching memory for system-on-plastic applications

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