MoS2/Si Heterojunction Device Stacked Utilizing an All-Transfer-Printing Method

Pin Ruei Huang; Bo Yan Chen; Yi Chieh Huang; Po Cheng Kuo; Tsan Wen Lu; Shih Yen Lin; Po Tsung Lee

MoS₂/Si Heterojunction Device Stacked Utilizing an All-Transfer-Printing Method

Pin Ruei Huang^*, Bo Yan Chen, Yi Chieh Huang, Po Cheng Kuo, Tsan Wen Lu, Shih Yen Lin, Po Tsung Lee

^*Corresponding author for this work

Department of Photonics

Research output: Contribution to conference › Paper › peer-review

Abstract

The all-transfer-printing processes are utilized to realize photodetectors composed of MoS₂/Si heterojunction. Compared to traditional photolithography process, this proposed method can avoid photoresist residue and organic solvent. As a result, the photoresponsivity increases ~ 30 times.

Original language	English
State	Published - 2024
Event	2024 Conference on Lasers and Electro-Optics/Pacific Rim, CLEO-PR 2024 - Incheon, Korea, Republic of Duration: 4 Aug 2024 → 8 Aug 2024

Conference

Conference	2024 Conference on Lasers and Electro-Optics/Pacific Rim, CLEO-PR 2024
Country/Territory	Korea, Republic of
City	Incheon
Period	4/08/24 → 8/08/24

Cite this

@conference{b5c0fb205a3245e29a58715331eacc7d,

title = "MoS2/Si Heterojunction Device Stacked Utilizing an All-Transfer-Printing Method",

abstract = "The all-transfer-printing processes are utilized to realize photodetectors composed of MoS2/Si heterojunction. Compared to traditional photolithography process, this proposed method can avoid photoresist residue and organic solvent. As a result, the photoresponsivity increases ~ 30 times.",

author = "Huang, {Pin Ruei} and Chen, {Bo Yan} and Huang, {Yi Chieh} and Kuo, {Po Cheng} and Lu, {Tsan Wen} and Lin, {Shih Yen} and Lee, {Po Tsung}",

note = "Publisher Copyright: {\textcopyright} 2024 The Author(s); 2024 Conference on Lasers and Electro-Optics/Pacific Rim, CLEO-PR 2024 ; Conference date: 04-08-2024 Through 08-08-2024",

year = "2024",

language = "English",

}

TY - CONF

T1 - MoS2/Si Heterojunction Device Stacked Utilizing an All-Transfer-Printing Method

AU - Huang, Pin Ruei

AU - Chen, Bo Yan

AU - Huang, Yi Chieh

AU - Kuo, Po Cheng

AU - Lu, Tsan Wen

AU - Lin, Shih Yen

AU - Lee, Po Tsung

PY - 2024

Y1 - 2024

N2 - The all-transfer-printing processes are utilized to realize photodetectors composed of MoS2/Si heterojunction. Compared to traditional photolithography process, this proposed method can avoid photoresist residue and organic solvent. As a result, the photoresponsivity increases ~ 30 times.

AB - The all-transfer-printing processes are utilized to realize photodetectors composed of MoS2/Si heterojunction. Compared to traditional photolithography process, this proposed method can avoid photoresist residue and organic solvent. As a result, the photoresponsivity increases ~ 30 times.

UR - http://www.scopus.com/inward/record.url?scp=85216120233&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:85216120233

T2 - 2024 Conference on Lasers and Electro-Optics/Pacific Rim, CLEO-PR 2024

Y2 - 4 August 2024 through 8 August 2024

ER -

MoS₂/Si Heterojunction Device Stacked Utilizing an All-Transfer-Printing Method

Abstract

Conference

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