MOSFETs with 9 to 13 a thick gate oxides

Mahesh S. Krishnan; Leland Chang; Tsu Jae King; Jeffrey Bokor; Chen-Ming Hu

doi:10.1109/IEDM.1999.823888

MOSFETs with 9 to 13 a thick gate oxides

Mahesh S. Krishnan^*, Leland Chang, Tsu Jae King, Jeffrey Bokor, Chen-Ming Hu

^*Corresponding author for this work

International College of Semiconductor Technology

Research output: Contribution to journal › Conference article › peer-review

37 Scopus citations

Abstract

In this work, MOSFETs with gate oxides between 9 to 13 A have been fabricated and its behavior analyzed. An improved methodology of extracting gate oxide thickness from the MOSFET gate currents in the accumulation regime is proposed. Experimental evidence for mobility reduction mechanism, namely Remote Charge Scattering has been presented. The mobility was found to be degraded because of scattering by ionized impurities in the poly-gate.

Original language	English
Pages (from-to)	241-244
Number of pages	4
Journal	Technical Digest - International Electron Devices Meeting
DOIs	https://doi.org/10.1109/IEDM.1999.823888
State	Published - 1 Dec 1999
Event	1999 IEEE International Devices Meeting (IEDM) - Washington, DC, USA Duration: 5 Dec 1999 → 8 Dec 1999

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10.1109/IEDM.1999.823888

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title = "MOSFETs with 9 to 13 a thick gate oxides",

abstract = "In this work, MOSFETs with gate oxides between 9 to 13 A have been fabricated and its behavior analyzed. An improved methodology of extracting gate oxide thickness from the MOSFET gate currents in the accumulation regime is proposed. Experimental evidence for mobility reduction mechanism, namely Remote Charge Scattering has been presented. The mobility was found to be degraded because of scattering by ionized impurities in the poly-gate.",

author = "Krishnan, {Mahesh S.} and Leland Chang and King, {Tsu Jae} and Jeffrey Bokor and Chen-Ming Hu",

year = "1999",

month = dec,

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doi = "10.1109/IEDM.1999.823888",

language = "English",

pages = "241--244",

journal = "Technical Digest - International Electron Devices Meeting",

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note = "1999 IEEE International Devices Meeting (IEDM) ; Conference date: 05-12-1999 Through 08-12-1999",

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TY - JOUR

T1 - MOSFETs with 9 to 13 a thick gate oxides

AU - Krishnan, Mahesh S.

AU - Chang, Leland

AU - King, Tsu Jae

AU - Bokor, Jeffrey

AU - Hu, Chen-Ming

PY - 1999/12/1

Y1 - 1999/12/1

N2 - In this work, MOSFETs with gate oxides between 9 to 13 A have been fabricated and its behavior analyzed. An improved methodology of extracting gate oxide thickness from the MOSFET gate currents in the accumulation regime is proposed. Experimental evidence for mobility reduction mechanism, namely Remote Charge Scattering has been presented. The mobility was found to be degraded because of scattering by ionized impurities in the poly-gate.

AB - In this work, MOSFETs with gate oxides between 9 to 13 A have been fabricated and its behavior analyzed. An improved methodology of extracting gate oxide thickness from the MOSFET gate currents in the accumulation regime is proposed. Experimental evidence for mobility reduction mechanism, namely Remote Charge Scattering has been presented. The mobility was found to be degraded because of scattering by ionized impurities in the poly-gate.

UR - http://www.scopus.com/inward/record.url?scp=0033345509&partnerID=8YFLogxK

U2 - 10.1109/IEDM.1999.823888

DO - 10.1109/IEDM.1999.823888

M3 - Conference article

AN - SCOPUS:0033345509

SN - 0163-1918

SP - 241

EP - 244

JO - Technical Digest - International Electron Devices Meeting

JF - Technical Digest - International Electron Devices Meeting

T2 - 1999 IEEE International Devices Meeting (IEDM)

Y2 - 5 December 1999 through 8 December 1999

ER -

MOSFETs with 9 to 13 a thick gate oxides

Abstract

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