MOSFET DEGRADATION DUE TO STRESSING OF THIN OXIDE.

M. S. Liang^*, Y. T. Yeow, C. Chang, Chen-Ming Hu, R. W. Brodersen

^*Corresponding author for this work

Research output: Contribution to journal › Conference article › peer-review

10 Scopus citations

Original language	English
Pages (from-to)	50-53
Number of pages	4
Journal	Technical Digest - International Electron Devices Meeting
DOIs	https://doi.org/10.1109/IEDM.1982.190209
State	Published - 1 Dec 1982

Access to Document

@article{96a41cddcad04995a5171c8728c60c40,

title = "MOSFET DEGRADATION DUE TO STRESSING OF THIN OXIDE.",

author = "Liang, {M. S.} and Yeow, {Y. T.} and C. Chang and Chen-Ming Hu and Brodersen, {R. W.}",

year = "1982",

month = dec,

day = "1",

doi = "10.1109/IEDM.1982.190209",

language = "English",

pages = "50--53",

journal = "Technical Digest - International Electron Devices Meeting",

issn = "0163-1918",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

}

TY - JOUR

T1 - MOSFET DEGRADATION DUE TO STRESSING OF THIN OXIDE.

AU - Liang, M. S.

AU - Yeow, Y. T.

AU - Chang, C.

AU - Hu, Chen-Ming

AU - Brodersen, R. W.

PY - 1982/12/1

Y1 - 1982/12/1

UR - http://www.scopus.com/inward/record.url?scp=0020243610&partnerID=8YFLogxK

U2 - 10.1109/IEDM.1982.190209

DO - 10.1109/IEDM.1982.190209

M3 - Conference article

AN - SCOPUS:0020243610

SP - 50

EP - 53

JO - Technical Digest - International Electron Devices Meeting

JF - Technical Digest - International Electron Devices Meeting

SN - 0163-1918

ER -