Morphology control of silicon nanotips fabricated by electron cyclotron resonance plasma etching

C. H. Hsu, Y. F. Huang, L. C. Chen, S. Chattopadhyay*, K. H. Chen, H. C. Lo, C. F. Chen

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

23 Scopus citations

Abstract

Formation of well-aligned silicon nanotips etched monolithically from a silicon substrate has been demonstrated. The effect of the process temperature on the physicochemical etching of silicon and subsequent fabrication of these nanotips has been investigated. 2.2-μm -long nanotips were formed at the process temperature of 250 °C and then decreased in length with increasing process temperature. Above 800 °C, the formation of the silicon nanotips was inhibited. Spectroscopic evidence attributes this fact to the efficient formation of silicon carbide thin film at higher process temperatures, instead of discontinuous nanomasks at lower process temperatures that prevent etching of the substrate. Another reason for this inhibited formation of nanotips is the reduced etching rate of the silicon by agents such as atomic H at higher process temperatures.

Original languageEnglish
Pages (from-to)308-311
Number of pages4
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume24
Issue number1
DOIs
StatePublished - Jan 2006

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