Morphologies and plane indices of pyramid patterns on wet-etched patterned sapphire substrate

Yu Chung Chen; Bo Wen Lin; Wen Ching Hsu; Yew-Chuhg Wu

doi:10.1016/j.matlet.2013.12.035

Morphologies and plane indices of pyramid patterns on wet-etched patterned sapphire substrate

Yu Chung Chen, Bo Wen Lin, Wen Ching Hsu, Yew-Chuhg Wu^*

^*Corresponding author for this work

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

17 Scopus citations

Abstract

A wet etching process was employed to investigate the evolution of pyramids on the patterned sapphire substrate (PSS). It has been found that the PSS comprised a hexagonal pyramid covered with six facets {34̄17} when disk-shaped SiO ₂ mask still remained. Three facets {11̄05} were exposed when mask was etched away. In this study, a continuous etching process was performed. It was found that another six facets {45̄130} and another three facets {11̄010} appeared on the bottom and the top of pyramid. Finally, when the etching time reached around 5 min, most of pyramids on the PSS disappeared.

Original language	English
Pages (from-to)	72-75
Number of pages	4
Journal	Materials Letters
Volume	118
DOIs	https://doi.org/10.1016/j.matlet.2013.12.035
State	Published - 1 Mar 2014

Keywords

Crystal structure
Optical materials
Patterned sapphire substrate
Properties
Surfaces
Wet etching process

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10.1016/j.matlet.2013.12.035

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title = "Morphologies and plane indices of pyramid patterns on wet-etched patterned sapphire substrate",

abstract = " A wet etching process was employed to investigate the evolution of pyramids on the patterned sapphire substrate (PSS). It has been found that the PSS comprised a hexagonal pyramid covered with six facets {3{\=4}17} when disk-shaped SiO 2 mask still remained. Three facets {1{\=1}05} were exposed when mask was etched away. In this study, a continuous etching process was performed. It was found that another six facets {4{\=5}130} and another three facets {1{\=1}010} appeared on the bottom and the top of pyramid. Finally, when the etching time reached around 5 min, most of pyramids on the PSS disappeared.",

keywords = "Crystal structure, Optical materials, Patterned sapphire substrate, Properties, Surfaces, Wet etching process",

author = "Chen, {Yu Chung} and Lin, {Bo Wen} and Hsu, {Wen Ching} and Yew-Chuhg Wu",

year = "2014",

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language = "English",

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journal = "Materials Letters",

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T1 - Morphologies and plane indices of pyramid patterns on wet-etched patterned sapphire substrate

AU - Chen, Yu Chung

AU - Lin, Bo Wen

AU - Hsu, Wen Ching

AU - Wu, Yew-Chuhg

PY - 2014/3/1

Y1 - 2014/3/1

N2 - A wet etching process was employed to investigate the evolution of pyramids on the patterned sapphire substrate (PSS). It has been found that the PSS comprised a hexagonal pyramid covered with six facets {34̄17} when disk-shaped SiO 2 mask still remained. Three facets {11̄05} were exposed when mask was etched away. In this study, a continuous etching process was performed. It was found that another six facets {45̄130} and another three facets {11̄010} appeared on the bottom and the top of pyramid. Finally, when the etching time reached around 5 min, most of pyramids on the PSS disappeared.

AB - A wet etching process was employed to investigate the evolution of pyramids on the patterned sapphire substrate (PSS). It has been found that the PSS comprised a hexagonal pyramid covered with six facets {34̄17} when disk-shaped SiO 2 mask still remained. Three facets {11̄05} were exposed when mask was etched away. In this study, a continuous etching process was performed. It was found that another six facets {45̄130} and another three facets {11̄010} appeared on the bottom and the top of pyramid. Finally, when the etching time reached around 5 min, most of pyramids on the PSS disappeared.

KW - Crystal structure

KW - Optical materials

KW - Patterned sapphire substrate

KW - Properties

KW - Surfaces

KW - Wet etching process

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U2 - 10.1016/j.matlet.2013.12.035

DO - 10.1016/j.matlet.2013.12.035

M3 - Article

AN - SCOPUS:84891687809

VL - 118

SP - 72

EP - 75

JO - Materials Letters

JF - Materials Letters

SN - 0167-577X

ER -

Morphologies and plane indices of pyramid patterns on wet-etched patterned sapphire substrate

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Keywords

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