Monophasic TiO 2 films deposited on SrTiO 3(100) by pulsed laser ablation

C. C. Hsieh; Kaung-Hsiung Wu; Jenh-Yih Juang; T. M. Uen; Jiunn-Yuan Lin; Y. S. Gou

doi:10.1063/1.1499522

Monophasic TiO ₂ films deposited on SrTiO ₃(100) by pulsed laser ablation

C. C. Hsieh^*, Kaung-Hsiung Wu, Jenh-Yih Juang, T. M. Uen, Jiunn-Yuan Lin, Y. S. Gou

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

10 Scopus citations

Abstract

Single phase TiO ₂ thin films, of either rutile or anatase structure, have been prepared on SrTiO ₃(STO)(100) substrates by in situ pulsed laser deposition (PLD). Thermodynamically unfavorable, for films deposited on STO(100) substrate directly, pure anatase TiO ₂(00l) films were formed even when a rutile TiO ₂(110) substrate was used as a target. On the other hand, pure rutile TiO ₂(110) films were obtained by oxidizing PLD TiN films in-situ at temperatures higher than 700°C. The optimized deposition conditions for preparing TiN and TiO ₂ films were reported. The crystalline structure, surface morphology, and electronic structure of these films were examined. A mechanism of the process of film formation is also proposed.

Original language	English
Pages (from-to)	2518-2523
Number of pages	6
Journal	Journal of Applied Physics
Volume	92
Issue number	5
DOIs	https://doi.org/10.1063/1.1499522
State	Published - 1 Sep 2002

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title = "Monophasic TiO 2 films deposited on SrTiO 3(100) by pulsed laser ablation",

abstract = "Single phase TiO 2 thin films, of either rutile or anatase structure, have been prepared on SrTiO 3(STO)(100) substrates by in situ pulsed laser deposition (PLD). Thermodynamically unfavorable, for films deposited on STO(100) substrate directly, pure anatase TiO 2(00l) films were formed even when a rutile TiO 2(110) substrate was used as a target. On the other hand, pure rutile TiO 2(110) films were obtained by oxidizing PLD TiN films in-situ at temperatures higher than 700°C. The optimized deposition conditions for preparing TiN and TiO 2 films were reported. The crystalline structure, surface morphology, and electronic structure of these films were examined. A mechanism of the process of film formation is also proposed.",

author = "Hsieh, {C. C.} and Kaung-Hsiung Wu and Jenh-Yih Juang and Uen, {T. M.} and Jiunn-Yuan Lin and Gou, {Y. S.}",

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TY - JOUR

T1 - Monophasic TiO 2 films deposited on SrTiO 3(100) by pulsed laser ablation

AU - Hsieh, C. C.

AU - Wu, Kaung-Hsiung

AU - Juang, Jenh-Yih

AU - Uen, T. M.

AU - Lin, Jiunn-Yuan

AU - Gou, Y. S.

PY - 2002/9/1

Y1 - 2002/9/1

N2 - Single phase TiO 2 thin films, of either rutile or anatase structure, have been prepared on SrTiO 3(STO)(100) substrates by in situ pulsed laser deposition (PLD). Thermodynamically unfavorable, for films deposited on STO(100) substrate directly, pure anatase TiO 2(00l) films were formed even when a rutile TiO 2(110) substrate was used as a target. On the other hand, pure rutile TiO 2(110) films were obtained by oxidizing PLD TiN films in-situ at temperatures higher than 700°C. The optimized deposition conditions for preparing TiN and TiO 2 films were reported. The crystalline structure, surface morphology, and electronic structure of these films were examined. A mechanism of the process of film formation is also proposed.

AB - Single phase TiO 2 thin films, of either rutile or anatase structure, have been prepared on SrTiO 3(STO)(100) substrates by in situ pulsed laser deposition (PLD). Thermodynamically unfavorable, for films deposited on STO(100) substrate directly, pure anatase TiO 2(00l) films were formed even when a rutile TiO 2(110) substrate was used as a target. On the other hand, pure rutile TiO 2(110) films were obtained by oxidizing PLD TiN films in-situ at temperatures higher than 700°C. The optimized deposition conditions for preparing TiN and TiO 2 films were reported. The crystalline structure, surface morphology, and electronic structure of these films were examined. A mechanism of the process of film formation is also proposed.

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DO - 10.1063/1.1499522

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JF - Journal of Applied Physics

IS - 5

ER -

Monophasic TiO ₂ films deposited on SrTiO ₃(100) by pulsed laser ablation

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