Monolithically Integrated Polysilicon/Oxide-Semiconductor Hybrid Thin-Film Transistors for Advanced Sensing

Ping Che Liu; Chun Jung Su; Pei Wen Li; Horng Chih Lin

doi:10.1109/JEDS.2023.3310930

Monolithically Integrated Polysilicon/Oxide-Semiconductor Hybrid Thin-Film Transistors for Advanced Sensing

Ping Che Liu, Chun Jung Su, Pei Wen Li, Horng Chih Lin^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

This work reports an ingenious hybrid thin-film transistor (TFT) process platform that allows monolithic integration of poly-Si and oxide-semiconductor (OS) TFT-based circuits using three-mask processes. The effectiveness of the proposed fabrication approach is demonstrated by a hybrid poly-Si/indium-gallium-zinc oxide (IGZO) TFT cell, in which source/drain (S/D) contacts of poly-Si TFTs were simultaneously formed during the fabrication of IGZO TFTs. A thin Ti layer is intentionally inserted between poly-Si and IGZO channels in order to improve the contact resistivity of the n^+ poly-Si/IGZO structure. The integrated poly-Si/IGZO TFT cells exhibit sharp transition slopes ( -35 mV/dec) in the transfer curves. With this feature, the sensitivity of the proposed hybrid TFT cells is greatly improved in comparison to individual IGZO TFTs, as evidenced in the detection measurements of NO2 gas.

Original language	English
Pages (from-to)	490-496
Number of pages	7
Journal	IEEE Journal of the Electron Devices Society
Volume	11
DOIs	https://doi.org/10.1109/JEDS.2023.3310930
State	Published - 2023

Keywords

IGZO
oxide semiconductor
Poly-Si
sensor
thin-film transistors

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10.1109/JEDS.2023.3310930

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title = "Monolithically Integrated Polysilicon/Oxide-Semiconductor Hybrid Thin-Film Transistors for Advanced Sensing",

abstract = "This work reports an ingenious hybrid thin-film transistor (TFT) process platform that allows monolithic integration of poly-Si and oxide-semiconductor (OS) TFT-based circuits using three-mask processes. The effectiveness of the proposed fabrication approach is demonstrated by a hybrid poly-Si/indium-gallium-zinc oxide (IGZO) TFT cell, in which source/drain (S/D) contacts of poly-Si TFTs were simultaneously formed during the fabrication of IGZO TFTs. A thin Ti layer is intentionally inserted between poly-Si and IGZO channels in order to improve the contact resistivity of the n^+ poly-Si/IGZO structure. The integrated poly-Si/IGZO TFT cells exhibit sharp transition slopes ( -35 mV/dec) in the transfer curves. With this feature, the sensitivity of the proposed hybrid TFT cells is greatly improved in comparison to individual IGZO TFTs, as evidenced in the detection measurements of NO2 gas.",

keywords = "IGZO, oxide semiconductor, Poly-Si, sensor, thin-film transistors",

author = "Liu, {Ping Che} and Su, {Chun Jung} and Li, {Pei Wen} and Lin, {Horng Chih}",

note = "Publisher Copyright: {\textcopyright} 2013 IEEE.",

year = "2023",

doi = "10.1109/JEDS.2023.3310930",

language = "English",

volume = "11",

pages = "490--496",

journal = "IEEE Journal of the Electron Devices Society",

issn = "2168-6734",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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T1 - Monolithically Integrated Polysilicon/Oxide-Semiconductor Hybrid Thin-Film Transistors for Advanced Sensing

AU - Liu, Ping Che

AU - Su, Chun Jung

AU - Li, Pei Wen

AU - Lin, Horng Chih

PY - 2023

Y1 - 2023

N2 - This work reports an ingenious hybrid thin-film transistor (TFT) process platform that allows monolithic integration of poly-Si and oxide-semiconductor (OS) TFT-based circuits using three-mask processes. The effectiveness of the proposed fabrication approach is demonstrated by a hybrid poly-Si/indium-gallium-zinc oxide (IGZO) TFT cell, in which source/drain (S/D) contacts of poly-Si TFTs were simultaneously formed during the fabrication of IGZO TFTs. A thin Ti layer is intentionally inserted between poly-Si and IGZO channels in order to improve the contact resistivity of the n^+ poly-Si/IGZO structure. The integrated poly-Si/IGZO TFT cells exhibit sharp transition slopes ( -35 mV/dec) in the transfer curves. With this feature, the sensitivity of the proposed hybrid TFT cells is greatly improved in comparison to individual IGZO TFTs, as evidenced in the detection measurements of NO2 gas.

AB - This work reports an ingenious hybrid thin-film transistor (TFT) process platform that allows monolithic integration of poly-Si and oxide-semiconductor (OS) TFT-based circuits using three-mask processes. The effectiveness of the proposed fabrication approach is demonstrated by a hybrid poly-Si/indium-gallium-zinc oxide (IGZO) TFT cell, in which source/drain (S/D) contacts of poly-Si TFTs were simultaneously formed during the fabrication of IGZO TFTs. A thin Ti layer is intentionally inserted between poly-Si and IGZO channels in order to improve the contact resistivity of the n^+ poly-Si/IGZO structure. The integrated poly-Si/IGZO TFT cells exhibit sharp transition slopes ( -35 mV/dec) in the transfer curves. With this feature, the sensitivity of the proposed hybrid TFT cells is greatly improved in comparison to individual IGZO TFTs, as evidenced in the detection measurements of NO2 gas.

KW - IGZO

KW - oxide semiconductor

KW - Poly-Si

KW - sensor

KW - thin-film transistors

UR - http://www.scopus.com/inward/record.url?scp=85169674693&partnerID=8YFLogxK

U2 - 10.1109/JEDS.2023.3310930

DO - 10.1109/JEDS.2023.3310930

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AN - SCOPUS:85169674693

SN - 2168-6734

VL - 11

SP - 490

EP - 496

JO - IEEE Journal of the Electron Devices Society

JF - IEEE Journal of the Electron Devices Society

ER -

Monolithically Integrated Polysilicon/Oxide-Semiconductor Hybrid Thin-Film Transistors for Advanced Sensing

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Keywords

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