Monolithically integrated 650 nm and 780 nm semiconductor lasers with aluminum-free active areas

Tien-Chang Lu; S. C. Wang; R. Fu; H. M. Shieh; K. J. Huang

doi:10.1109/CLEO.2001.948071

Monolithically integrated 650 nm and 780 nm semiconductor lasers with aluminum-free active areas

Tien-Chang Lu^*, S. C. Wang, R. Fu, H. M. Shieh, K. J. Huang

^*Corresponding author for this work

Department of Photonics

Research output: Contribution to conference › Paper › peer-review

Abstract

Two substantially different laser materials with aluminum-free active-areas were used for the realization of monolithic integration of two wavelength laser diodes in a single chip. The continuous wave (CW) at room temperature was used to characterize the monolithically integrated laser chips. The laser output power versus current characteristics and the emission spectrum for the 650 nm and 780nm lasers were shown. The threshold current and the differential quantum efficiency of both the lasers were measured.

Original language	English
Pages	482-483
Number of pages	2
DOIs	https://doi.org/10.1109/CLEO.2001.948071
State	Published - 2001
Event	Conference on Lasers and Electro-Optics (CLEO) - Baltimore, MD, United States Duration: 6 May 2001 → 11 May 2001

Conference

Conference	Conference on Lasers and Electro-Optics (CLEO)
Country/Territory	United States
City	Baltimore, MD
Period	6/05/01 → 11/05/01

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10.1109/CLEO.2001.948071

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title = "Monolithically integrated 650 nm and 780 nm semiconductor lasers with aluminum-free active areas",

abstract = "Two substantially different laser materials with aluminum-free active-areas were used for the realization of monolithic integration of two wavelength laser diodes in a single chip. The continuous wave (CW) at room temperature was used to characterize the monolithically integrated laser chips. The laser output power versus current characteristics and the emission spectrum for the 650 nm and 780nm lasers were shown. The threshold current and the differential quantum efficiency of both the lasers were measured.",

author = "Tien-Chang Lu and Wang, {S. C.} and R. Fu and Shieh, {H. M.} and Huang, {K. J.}",

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AU - Lu, Tien-Chang

AU - Wang, S. C.

AU - Fu, R.

AU - Shieh, H. M.

AU - Huang, K. J.

PY - 2001

Y1 - 2001

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AB - Two substantially different laser materials with aluminum-free active-areas were used for the realization of monolithic integration of two wavelength laser diodes in a single chip. The continuous wave (CW) at room temperature was used to characterize the monolithically integrated laser chips. The laser output power versus current characteristics and the emission spectrum for the 650 nm and 780nm lasers were shown. The threshold current and the differential quantum efficiency of both the lasers were measured.

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DO - 10.1109/CLEO.2001.948071

M3 - Paper

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EP - 483

T2 - Conference on Lasers and Electro-Optics (CLEO)

Y2 - 6 May 2001 through 11 May 2001

ER -

Monolithically integrated 650 nm and 780 nm semiconductor lasers with aluminum-free active areas

Abstract

Conference

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