Monolithic integration of digital MEMS thermometer and temperature compensated RTC on 1P6M ASIC compatible CMOS MEMS process

Ching Wen Hsu; Kuei-Ann Wen

doi:10.1109/SMELEC.2018.8481316

Monolithic integration of digital MEMS thermometer and temperature compensated RTC on 1P6M ASIC compatible CMOS MEMS process

Ching Wen Hsu, Kuei-Ann Wen

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

5 Scopus citations

Abstract

A monolithic resonator based digital MEMS thermometer has been proposed. It is further integrated with Real time clock (RTC) to demonstrate multifunction design as thermometer and temperature compensation. The MEMS/ASIC combined SOC is fabricated on UMC 0.18μm 1P6M ASIC compatible CMOS MEMS process. The resonant frequency of thermometer has been simulated with sensitivity-18Hz/°C. The temperature dependency of RTC frequency is 13.15(ppm/°C) in a temperature range from 20 °C to 80 °C. Power consumption of the readout circuit is 440.3μW.

Original language	English
Title of host publication	2018 IEEE International Conference on Semiconductor Electronics, ICSE 2018 - Proceedings
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	45-48
Number of pages	4
ISBN (Electronic)	9781538652831
DOIs	https://doi.org/10.1109/SMELEC.2018.8481316
State	Published - 3 Oct 2018
Event	13th IEEE International Conference on Semiconductor Electronics, ICSE 2018 - Kuala Lumpur, Malaysia Duration: 15 Aug 2018 → 17 Aug 2018

Publication series

Name	IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE
Volume	2018-August

Conference

Conference	13th IEEE International Conference on Semiconductor Electronics, ICSE 2018
Country/Territory	Malaysia
City	Kuala Lumpur
Period	15/08/18 → 17/08/18

Keywords

calibration
MEMS resonator
RTC
thermometer

Access to Document

10.1109/SMELEC.2018.8481316

Cite this

Hsu, C. W., & Wen, K.-A. (2018). Monolithic integration of digital MEMS thermometer and temperature compensated RTC on 1P6M ASIC compatible CMOS MEMS process. In 2018 IEEE International Conference on Semiconductor Electronics, ICSE 2018 - Proceedings (pp. 45-48). Article 8481316 (IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE; Vol. 2018-August). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/SMELEC.2018.8481316

Hsu, Ching Wen ; Wen, Kuei-Ann. / Monolithic integration of digital MEMS thermometer and temperature compensated RTC on 1P6M ASIC compatible CMOS MEMS process. 2018 IEEE International Conference on Semiconductor Electronics, ICSE 2018 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2018. pp. 45-48 (IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE).

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title = "Monolithic integration of digital MEMS thermometer and temperature compensated RTC on 1P6M ASIC compatible CMOS MEMS process",

abstract = "A monolithic resonator based digital MEMS thermometer has been proposed. It is further integrated with Real time clock (RTC) to demonstrate multifunction design as thermometer and temperature compensation. The MEMS/ASIC combined SOC is fabricated on UMC 0.18μm 1P6M ASIC compatible CMOS MEMS process. The resonant frequency of thermometer has been simulated with sensitivity-18Hz/°C. The temperature dependency of RTC frequency is 13.15(ppm/°C) in a temperature range from 20 °C to 80 °C. Power consumption of the readout circuit is 440.3μW.",

keywords = "calibration, MEMS resonator, RTC, thermometer",

author = "Hsu, {Ching Wen} and Kuei-Ann Wen",

year = "2018",

month = oct,

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doi = "10.1109/SMELEC.2018.8481316",

language = "English",

series = "IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "45--48",

booktitle = "2018 IEEE International Conference on Semiconductor Electronics, ICSE 2018 - Proceedings",

address = "United States",

note = "13th IEEE International Conference on Semiconductor Electronics, ICSE 2018 ; Conference date: 15-08-2018 Through 17-08-2018",

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Hsu, CW & Wen, K-A 2018, Monolithic integration of digital MEMS thermometer and temperature compensated RTC on 1P6M ASIC compatible CMOS MEMS process. in 2018 IEEE International Conference on Semiconductor Electronics, ICSE 2018 - Proceedings., 8481316, IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE, vol. 2018-August, Institute of Electrical and Electronics Engineers Inc., pp. 45-48, 13th IEEE International Conference on Semiconductor Electronics, ICSE 2018, Kuala Lumpur, Malaysia, 15/08/18. https://doi.org/10.1109/SMELEC.2018.8481316

Monolithic integration of digital MEMS thermometer and temperature compensated RTC on 1P6M ASIC compatible CMOS MEMS process. / Hsu, Ching Wen; Wen, Kuei-Ann.
2018 IEEE International Conference on Semiconductor Electronics, ICSE 2018 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2018. p. 45-48 8481316 (IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE; Vol. 2018-August).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Hsu, Ching Wen

AU - Wen, Kuei-Ann

PY - 2018/10/3

Y1 - 2018/10/3

N2 - A monolithic resonator based digital MEMS thermometer has been proposed. It is further integrated with Real time clock (RTC) to demonstrate multifunction design as thermometer and temperature compensation. The MEMS/ASIC combined SOC is fabricated on UMC 0.18μm 1P6M ASIC compatible CMOS MEMS process. The resonant frequency of thermometer has been simulated with sensitivity-18Hz/°C. The temperature dependency of RTC frequency is 13.15(ppm/°C) in a temperature range from 20 °C to 80 °C. Power consumption of the readout circuit is 440.3μW.

AB - A monolithic resonator based digital MEMS thermometer has been proposed. It is further integrated with Real time clock (RTC) to demonstrate multifunction design as thermometer and temperature compensation. The MEMS/ASIC combined SOC is fabricated on UMC 0.18μm 1P6M ASIC compatible CMOS MEMS process. The resonant frequency of thermometer has been simulated with sensitivity-18Hz/°C. The temperature dependency of RTC frequency is 13.15(ppm/°C) in a temperature range from 20 °C to 80 °C. Power consumption of the readout circuit is 440.3μW.

KW - calibration

KW - MEMS resonator

KW - RTC

KW - thermometer

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BT - 2018 IEEE International Conference on Semiconductor Electronics, ICSE 2018 - Proceedings

PB - Institute of Electrical and Electronics Engineers Inc.

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Hsu CW, Wen KA. Monolithic integration of digital MEMS thermometer and temperature compensated RTC on 1P6M ASIC compatible CMOS MEMS process. In 2018 IEEE International Conference on Semiconductor Electronics, ICSE 2018 - Proceedings. Institute of Electrical and Electronics Engineers Inc. 2018. p. 45-48. 8481316. (IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE). doi: 10.1109/SMELEC.2018.8481316

Monolithic integration of digital MEMS thermometer and temperature compensated RTC on 1P6M ASIC compatible CMOS MEMS process

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