Monolithic GaN-Based Gate Driver With On-Chip Adaptive On-Time Controller and Negative Current Slope Detector to Prevent Shoot-Through

Shu Yung Lin; Ssu Yu Lin; Sheng Hsi Hung; Tz Wun Wang; Ching Ho Li; Chang Lin Go; Shao Chang Huang; Ke Horng Chen; Kuo Lin Zheng; Ying Hsi Lin; Shian Ru Lin; Tsung Yen Tsai

doi:10.1109/LSSC.2023.3301151

Monolithic GaN-Based Gate Driver With On-Chip Adaptive On-Time Controller and Negative Current Slope Detector to Prevent Shoot-Through

Shu Yung Lin, Ssu Yu Lin, Sheng Hsi Hung, Tz Wun Wang, Ching Ho Li, Chang Lin Go, Shao Chang Huang, Ke Horng Chen^*, Kuo Lin Zheng, Ying Hsi Lin, Shian Ru Lin, Tsung Yen Tsai

^*Corresponding author for this work

Department of Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

This letter proposes a monolithic gallium nitride (GaN) primary-side controller for a flyback converter, consisting mainly of a negative current slope (NCS) detector to suppress shoot-through problems caused by GaN process defects. Moreover, the proposed adaptive on-time (AOT) controller can adapt to changes in the input voltage and limit the maximum allowable switching frequency to achieve high efficiency. Furthermore, the diode turn-on voltage compensated gate driver also enhances the ability to drive the on-chip 650-V power GaN switch. Therefore, the proposed fully integrated GaN-based chip can improve the efficiency by 2% as the deadtime is reduced from 40 to 7 ns. The proposed gate driver has a peak efficiency of 96.2% and a maximum current of 6 A.

Original language	English
Journal	IEEE Solid-State Circuits Letters
Volume	6
DOIs	https://doi.org/10.1109/LSSC.2023.3301151
State	Published - 2023

Keywords

Adaptive on-time (AOT)
diode turn-on voltage compensated gate driver
gallium nitride (GaN)
negative current slope (NCS) detector

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10.1109/LSSC.2023.3301151

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Lin, S. Y., Lin, S. Y., Hung, S. H., Wang, T. W., Li, C. H., Go, C. L., Huang, S. C., Chen, K. H., Zheng, K. L., Lin, Y. H., Lin, S. R., & Tsai, T. Y. (2023). Monolithic GaN-Based Gate Driver With On-Chip Adaptive On-Time Controller and Negative Current Slope Detector to Prevent Shoot-Through. IEEE Solid-State Circuits Letters, 6. https://doi.org/10.1109/LSSC.2023.3301151

@article{399c34ff12624f83aaa2c9562ab1bdce,

title = "Monolithic GaN-Based Gate Driver With On-Chip Adaptive On-Time Controller and Negative Current Slope Detector to Prevent Shoot-Through",

abstract = "This letter proposes a monolithic gallium nitride (GaN) primary-side controller for a flyback converter, consisting mainly of a negative current slope (NCS) detector to suppress shoot-through problems caused by GaN process defects. Moreover, the proposed adaptive on-time (AOT) controller can adapt to changes in the input voltage and limit the maximum allowable switching frequency to achieve high efficiency. Furthermore, the diode turn-on voltage compensated gate driver also enhances the ability to drive the on-chip 650-V power GaN switch. Therefore, the proposed fully integrated GaN-based chip can improve the efficiency by 2% as the deadtime is reduced from 40 to 7 ns. The proposed gate driver has a peak efficiency of 96.2% and a maximum current of 6 A.",

keywords = "Adaptive on-time (AOT), diode turn-on voltage compensated gate driver, gallium nitride (GaN), negative current slope (NCS) detector",

author = "Lin, {Shu Yung} and Lin, {Ssu Yu} and Hung, {Sheng Hsi} and Wang, {Tz Wun} and Li, {Ching Ho} and Go, {Chang Lin} and Huang, {Shao Chang} and Chen, {Ke Horng} and Zheng, {Kuo Lin} and Lin, {Ying Hsi} and Lin, {Shian Ru} and Tsai, {Tsung Yen}",

note = "Publisher Copyright: {\textcopyright} 2018 IEEE.",

year = "2023",

doi = "10.1109/LSSC.2023.3301151",

language = "English",

volume = "6",

journal = "IEEE Solid-State Circuits Letters",

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publisher = "Institute of Electrical and Electronics Engineers Inc.",

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T1 - Monolithic GaN-Based Gate Driver With On-Chip Adaptive On-Time Controller and Negative Current Slope Detector to Prevent Shoot-Through

AU - Lin, Shu Yung

AU - Lin, Ssu Yu

AU - Hung, Sheng Hsi

AU - Wang, Tz Wun

AU - Li, Ching Ho

AU - Go, Chang Lin

AU - Huang, Shao Chang

AU - Chen, Ke Horng

AU - Zheng, Kuo Lin

AU - Lin, Ying Hsi

AU - Lin, Shian Ru

AU - Tsai, Tsung Yen

PY - 2023

Y1 - 2023

N2 - This letter proposes a monolithic gallium nitride (GaN) primary-side controller for a flyback converter, consisting mainly of a negative current slope (NCS) detector to suppress shoot-through problems caused by GaN process defects. Moreover, the proposed adaptive on-time (AOT) controller can adapt to changes in the input voltage and limit the maximum allowable switching frequency to achieve high efficiency. Furthermore, the diode turn-on voltage compensated gate driver also enhances the ability to drive the on-chip 650-V power GaN switch. Therefore, the proposed fully integrated GaN-based chip can improve the efficiency by 2% as the deadtime is reduced from 40 to 7 ns. The proposed gate driver has a peak efficiency of 96.2% and a maximum current of 6 A.

AB - This letter proposes a monolithic gallium nitride (GaN) primary-side controller for a flyback converter, consisting mainly of a negative current slope (NCS) detector to suppress shoot-through problems caused by GaN process defects. Moreover, the proposed adaptive on-time (AOT) controller can adapt to changes in the input voltage and limit the maximum allowable switching frequency to achieve high efficiency. Furthermore, the diode turn-on voltage compensated gate driver also enhances the ability to drive the on-chip 650-V power GaN switch. Therefore, the proposed fully integrated GaN-based chip can improve the efficiency by 2% as the deadtime is reduced from 40 to 7 ns. The proposed gate driver has a peak efficiency of 96.2% and a maximum current of 6 A.

KW - Adaptive on-time (AOT)

KW - diode turn-on voltage compensated gate driver

KW - gallium nitride (GaN)

KW - negative current slope (NCS) detector

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U2 - 10.1109/LSSC.2023.3301151

DO - 10.1109/LSSC.2023.3301151

M3 - Article

AN - SCOPUS:85166759512

SN - 2573-9603

VL - 6

JO - IEEE Solid-State Circuits Letters

JF - IEEE Solid-State Circuits Letters

ER -

Monolithic GaN-Based Gate Driver With On-Chip Adaptive On-Time Controller and Negative Current Slope Detector to Prevent Shoot-Through

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Keywords

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