Monolithic GaN-Based Driver and GaN Switch With Diode-Emulated GaN Technique for 50-MHz Operation and Sub-0.2-ns Deadtime Control

Tz Wun Wang, Yu Yung Kao, Sheng Hsi Hung, Yong Hwa Wen, Tzu Hsien Yang, Si Yi Li, Ke Horng Chen, Kuo Lin Zheng, Ying Hsi Lin, Shian Ru Lin, Tsung Yen Tsai

Research output: Contribution to journalArticlepeer-review

10 Scopus citations

Abstract

In this article, the proposed monolithic gallium nitride (GaN)-based driver uses the diode-emulated technique to reduce reverse conduction through a meta-stable fast (MSF) comparator with sub-0.2-ns deadtime. In addition, an active bootstrap controller with a fast discharge loop is used to reduce parasitic effects to improve the driving capability, thereby increasing the switching frequency. Furthermore, the proposed gate driver with dual <inline-formula> <tex-math notation="LaTeX">$dv/dt$</tex-math> </inline-formula> control can reduce the gate-ringing during turn-on/turn-off. Experimental results show that the GaN-based monolithic driver can achieve an operating frequency of 50 MHz and a slew rate of 120 V/ns. At 50 MHz, the conversion of 48-to-5 V can achieve a peak efficiency of 95.4% at the load current of 3.5 A.

Original languageEnglish
Pages (from-to)1-12
Number of pages12
JournalIEEE Journal of Solid-State Circuits
DOIs
StateAccepted/In press - 2022

Keywords

  • Active bootstrap technique
  • Control systems
  • diode-emulated gallium nitride (GaN) technique
  • dual dv/dt controller
  • Gallium nitride
  • GaN switch
  • HEMTs
  • Logic gates
  • meta-stable fast (MSF) comparator
  • MODFETs
  • monolithically integrated GaN driver
  • Switches
  • Topology

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