Monolithic 3D BEOL FinFET switch arrays using location-controlled-grain technique in voltage regulator with better FOM than 2D regulators

Ping Yi Hsieh; Yi Jui Chang; Pin Jun Chen; Chun Liang Chen; Chih Chao Yang; Po-Tsang Huang; Yi Jing Chen; Chih Ming Shen; Yu Wei Liu; Chien Chi Huang; Ming Chi Tai; Wei Chung Lo; Chang Hong Shen; Jia Min Shieh; Da Chiang Chang; Kuan-Neng Chen; Wen Kuan Yeh; Chen-Ming Hu

doi:10.1109/IEDM19573.2019.8993441

Monolithic 3D BEOL FinFET switch arrays using location-controlled-grain technique in voltage regulator with better FOM than 2D regulators

Ping Yi Hsieh, Yi Jui Chang, Pin Jun Chen, Chun Liang Chen, Chih Chao Yang^*, Po-Tsang Huang, Yi Jing Chen, Chih Ming Shen, Yu Wei Liu, Chien Chi Huang, Ming Chi Tai, Wei Chung Lo, Chang Hong Shen, Jia Min Shieh, Da Chiang Chang, Kuan-Neng Chen, Wen Kuan Yeh, Chen-Ming Hu

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

19 Scopus citations

Abstract

Monolithic 3D back-end of line (BEOL) FinFET switch arrays are demonstrated in large single crystalline Si islands (2.56 μm²), whose location, size and shape are determined by design. Details of the improved location-controlled-grain (LCG) technique are presented. A voltage regulator implemented with the BEOL switch arrays using external control signals shows better theoretical figure of merit (FOM) of 0.089ns than 2D voltage regulators of 0.43ns.

Original language	English
Title of host publication	2019 IEEE International Electron Devices Meeting, IEDM 2019
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	3.1.1-3.1.4
Number of pages	4
ISBN (Electronic)	9781728140315
DOIs	https://doi.org/10.1109/IEDM19573.2019.8993441
State	Published - Jan 2019
Event	65th Annual IEEE International Electron Devices Meeting, IEDM 2019 - San Francisco, United States Duration: 7 Dec 2019 → 11 Dec 2019

Publication series

Name	Technical Digest - International Electron Devices Meeting, IEDM
Volume	2019-December
ISSN (Print)	0163-1918

Conference

Conference	65th Annual IEEE International Electron Devices Meeting, IEDM 2019
Country/Territory	United States
City	San Francisco
Period	7/12/19 → 11/12/19

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10.1109/IEDM19573.2019.8993441

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Hsieh, P. Y., Chang, Y. J., Chen, P. J., Chen, C. L., Yang, C. C., Huang, P.-T., Chen, Y. J., Shen, C. M., Liu, Y. W., Huang, C. C., Tai, M. C., Lo, W. C., Shen, C. H., Shieh, J. M., Chang, D. C., Chen, K.-N., Yeh, W. K., & Hu, C.-M. (2019). Monolithic 3D BEOL FinFET switch arrays using location-controlled-grain technique in voltage regulator with better FOM than 2D regulators. In 2019 IEEE International Electron Devices Meeting, IEDM 2019 (pp. 3.1.1-3.1.4). Article 8993441 (Technical Digest - International Electron Devices Meeting, IEDM; Vol. 2019-December). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IEDM19573.2019.8993441

Hsieh, Ping Yi ; Chang, Yi Jui ; Chen, Pin Jun et al. / Monolithic 3D BEOL FinFET switch arrays using location-controlled-grain technique in voltage regulator with better FOM than 2D regulators. 2019 IEEE International Electron Devices Meeting, IEDM 2019. Institute of Electrical and Electronics Engineers Inc., 2019. pp. 3.1.1-3.1.4 (Technical Digest - International Electron Devices Meeting, IEDM).

@inproceedings{5af5371951ca42a2b72310b49d885aef,

title = "Monolithic 3D BEOL FinFET switch arrays using location-controlled-grain technique in voltage regulator with better FOM than 2D regulators",

abstract = "Monolithic 3D back-end of line (BEOL) FinFET switch arrays are demonstrated in large single crystalline Si islands (2.56 μm2), whose location, size and shape are determined by design. Details of the improved location-controlled-grain (LCG) technique are presented. A voltage regulator implemented with the BEOL switch arrays using external control signals shows better theoretical figure of merit (FOM) of 0.089ns than 2D voltage regulators of 0.43ns.",

author = "Hsieh, {Ping Yi} and Chang, {Yi Jui} and Chen, {Pin Jun} and Chen, {Chun Liang} and Yang, {Chih Chao} and Po-Tsang Huang and Chen, {Yi Jing} and Shen, {Chih Ming} and Liu, {Yu Wei} and Huang, {Chien Chi} and Tai, {Ming Chi} and Lo, {Wei Chung} and Shen, {Chang Hong} and Shieh, {Jia Min} and Chang, {Da Chiang} and Kuan-Neng Chen and Yeh, {Wen Kuan} and Chen-Ming Hu",

note = "Publisher Copyright: {\textcopyright} 2019 IEEE.; 65th Annual IEEE International Electron Devices Meeting, IEDM 2019 ; Conference date: 07-12-2019 Through 11-12-2019",

year = "2019",

month = jan,

doi = "10.1109/IEDM19573.2019.8993441",

language = "English",

series = "Technical Digest - International Electron Devices Meeting, IEDM",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "3.1.1--3.1.4",

booktitle = "2019 IEEE International Electron Devices Meeting, IEDM 2019",

address = "United States",

}

Hsieh, PY, Chang, YJ, Chen, PJ, Chen, CL, Yang, CC, Huang, P-T, Chen, YJ, Shen, CM, Liu, YW, Huang, CC, Tai, MC, Lo, WC, Shen, CH, Shieh, JM, Chang, DC, Chen, K-N, Yeh, WK & Hu, C-M 2019, Monolithic 3D BEOL FinFET switch arrays using location-controlled-grain technique in voltage regulator with better FOM than 2D regulators. in 2019 IEEE International Electron Devices Meeting, IEDM 2019., 8993441, Technical Digest - International Electron Devices Meeting, IEDM, vol. 2019-December, Institute of Electrical and Electronics Engineers Inc., pp. 3.1.1-3.1.4, 65th Annual IEEE International Electron Devices Meeting, IEDM 2019, San Francisco, United States, 7/12/19. https://doi.org/10.1109/IEDM19573.2019.8993441

Monolithic 3D BEOL FinFET switch arrays using location-controlled-grain technique in voltage regulator with better FOM than 2D regulators. / Hsieh, Ping Yi; Chang, Yi Jui; Chen, Pin Jun et al.
2019 IEEE International Electron Devices Meeting, IEDM 2019. Institute of Electrical and Electronics Engineers Inc., 2019. p. 3.1.1-3.1.4 8993441 (Technical Digest - International Electron Devices Meeting, IEDM; Vol. 2019-December).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Monolithic 3D BEOL FinFET switch arrays using location-controlled-grain technique in voltage regulator with better FOM than 2D regulators

AU - Hsieh, Ping Yi

AU - Chang, Yi Jui

AU - Chen, Pin Jun

AU - Chen, Chun Liang

AU - Yang, Chih Chao

AU - Huang, Po-Tsang

AU - Chen, Yi Jing

AU - Shen, Chih Ming

AU - Liu, Yu Wei

AU - Huang, Chien Chi

AU - Tai, Ming Chi

AU - Lo, Wei Chung

AU - Shen, Chang Hong

AU - Shieh, Jia Min

AU - Chang, Da Chiang

AU - Chen, Kuan-Neng

AU - Yeh, Wen Kuan

AU - Hu, Chen-Ming

PY - 2019/1

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N2 - Monolithic 3D back-end of line (BEOL) FinFET switch arrays are demonstrated in large single crystalline Si islands (2.56 μm2), whose location, size and shape are determined by design. Details of the improved location-controlled-grain (LCG) technique are presented. A voltage regulator implemented with the BEOL switch arrays using external control signals shows better theoretical figure of merit (FOM) of 0.089ns than 2D voltage regulators of 0.43ns.

AB - Monolithic 3D back-end of line (BEOL) FinFET switch arrays are demonstrated in large single crystalline Si islands (2.56 μm2), whose location, size and shape are determined by design. Details of the improved location-controlled-grain (LCG) technique are presented. A voltage regulator implemented with the BEOL switch arrays using external control signals shows better theoretical figure of merit (FOM) of 0.089ns than 2D voltage regulators of 0.43ns.

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DO - 10.1109/IEDM19573.2019.8993441

M3 - Conference contribution

AN - SCOPUS:85081044151

T3 - Technical Digest - International Electron Devices Meeting, IEDM

SP - 3.1.1-3.1.4

BT - 2019 IEEE International Electron Devices Meeting, IEDM 2019

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 65th Annual IEEE International Electron Devices Meeting, IEDM 2019

Y2 - 7 December 2019 through 11 December 2019

ER -

Hsieh PY, Chang YJ, Chen PJ, Chen CL, Yang CC, Huang PT et al. Monolithic 3D BEOL FinFET switch arrays using location-controlled-grain technique in voltage regulator with better FOM than 2D regulators. In 2019 IEEE International Electron Devices Meeting, IEDM 2019. Institute of Electrical and Electronics Engineers Inc. 2019. p. 3.1.1-3.1.4. 8993441. (Technical Digest - International Electron Devices Meeting, IEDM). doi: 10.1109/IEDM19573.2019.8993441

Monolithic 3D BEOL FinFET switch arrays using location-controlled-grain technique in voltage regulator with better FOM than 2D regulators

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