Monolithic 2.4 GHz CMOS active balanced circuit

Chau-Chin Su; C. C. Hsiao; Y. J. Chan

doi:10.1109/APMC.1999.829778

Monolithic 2.4 GHz CMOS active balanced circuit

Chau-Chin Su^*, C. C. Hsiao, Y. J. Chan

^*Corresponding author for this work

Department of Electrical and Computer Engineering

Research output: Contribution to conference › Paper › peer-review

1 Scopus citations

Abstract

A modified RF nMOS model is presented for high-frequency circuit design. The high-frequency nMOS model is based on SPICE LEVEL 3 model, by adding parasitic passive components to describe the microwave behaviors. This hybrid RF model can well predict the MOSFET behaviors up to 10 GHz under various biasing conditions. A spiral inductor model is also presented. The inductance at 2.4 GHz is 2.4 nH, with a quality factor of 4. Based on these models, we designed a 180° active-balanced circuit. The 180° balanced circuits consist of a MOSFET (0.6 μm gate length and 200 μm gate width), and input/output matching networks. The unbalanced phase was about 180° at 1 to approximately 2.5 GHz frequency band, and the insertion loss was about 6 dB. The magnitude difference between two output ports is less than 0.7 dB.

Original language	English
Pages	214-217
Number of pages	4
DOIs	https://doi.org/10.1109/APMC.1999.829778
State	Published - 1999
Event	1999 Asia Pacific Microwave Conference (APMC'99) 'Microwaves Enter the 21st Century' - Singapore, Singapore Duration: 30 Nov 1999 → 3 Dec 1999

Conference

Conference	1999 Asia Pacific Microwave Conference (APMC'99) 'Microwaves Enter the 21st Century'
City	Singapore, Singapore
Period	30/11/99 → 3/12/99

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10.1109/APMC.1999.829778

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title = "Monolithic 2.4 GHz CMOS active balanced circuit",

abstract = "A modified RF nMOS model is presented for high-frequency circuit design. The high-frequency nMOS model is based on SPICE LEVEL 3 model, by adding parasitic passive components to describe the microwave behaviors. This hybrid RF model can well predict the MOSFET behaviors up to 10 GHz under various biasing conditions. A spiral inductor model is also presented. The inductance at 2.4 GHz is 2.4 nH, with a quality factor of 4. Based on these models, we designed a 180° active-balanced circuit. The 180° balanced circuits consist of a MOSFET (0.6 μm gate length and 200 μm gate width), and input/output matching networks. The unbalanced phase was about 180° at 1 to approximately 2.5 GHz frequency band, and the insertion loss was about 6 dB. The magnitude difference between two output ports is less than 0.7 dB.",

author = "Chau-Chin Su and Hsiao, {C. C.} and Chan, {Y. J.}",

year = "1999",

doi = "10.1109/APMC.1999.829778",

language = "English",

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note = "1999 Asia Pacific Microwave Conference (APMC'99) 'Microwaves Enter the 21st Century' ; Conference date: 30-11-1999 Through 03-12-1999",

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AU - Su, Chau-Chin

AU - Hsiao, C. C.

AU - Chan, Y. J.

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N2 - A modified RF nMOS model is presented for high-frequency circuit design. The high-frequency nMOS model is based on SPICE LEVEL 3 model, by adding parasitic passive components to describe the microwave behaviors. This hybrid RF model can well predict the MOSFET behaviors up to 10 GHz under various biasing conditions. A spiral inductor model is also presented. The inductance at 2.4 GHz is 2.4 nH, with a quality factor of 4. Based on these models, we designed a 180° active-balanced circuit. The 180° balanced circuits consist of a MOSFET (0.6 μm gate length and 200 μm gate width), and input/output matching networks. The unbalanced phase was about 180° at 1 to approximately 2.5 GHz frequency band, and the insertion loss was about 6 dB. The magnitude difference between two output ports is less than 0.7 dB.

AB - A modified RF nMOS model is presented for high-frequency circuit design. The high-frequency nMOS model is based on SPICE LEVEL 3 model, by adding parasitic passive components to describe the microwave behaviors. This hybrid RF model can well predict the MOSFET behaviors up to 10 GHz under various biasing conditions. A spiral inductor model is also presented. The inductance at 2.4 GHz is 2.4 nH, with a quality factor of 4. Based on these models, we designed a 180° active-balanced circuit. The 180° balanced circuits consist of a MOSFET (0.6 μm gate length and 200 μm gate width), and input/output matching networks. The unbalanced phase was about 180° at 1 to approximately 2.5 GHz frequency band, and the insertion loss was about 6 dB. The magnitude difference between two output ports is less than 0.7 dB.

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T2 - 1999 Asia Pacific Microwave Conference (APMC'99) 'Microwaves Enter the 21st Century'

Y2 - 30 November 1999 through 3 December 1999

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Monolithic 2.4 GHz CMOS active balanced circuit

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