Monolithic 2.4 GHz CMOS active balanced circuit

Chau-Chin Su*, C. C. Hsiao, Y. J. Chan

*Corresponding author for this work

Research output: Contribution to conferencePaperpeer-review

1 Scopus citations


A modified RF nMOS model is presented for high-frequency circuit design. The high-frequency nMOS model is based on SPICE LEVEL 3 model, by adding parasitic passive components to describe the microwave behaviors. This hybrid RF model can well predict the MOSFET behaviors up to 10 GHz under various biasing conditions. A spiral inductor model is also presented. The inductance at 2.4 GHz is 2.4 nH, with a quality factor of 4. Based on these models, we designed a 180° active-balanced circuit. The 180° balanced circuits consist of a MOSFET (0.6 μm gate length and 200 μm gate width), and input/output matching networks. The unbalanced phase was about 180° at 1 to approximately 2.5 GHz frequency band, and the insertion loss was about 6 dB. The magnitude difference between two output ports is less than 0.7 dB.

Original languageEnglish
Number of pages4
StatePublished - 1 Dec 1999
Event1999 Asia Pacific Microwave Conference (APMC'99) 'Microwaves Enter the 21st Century' - Singapore, Singapore
Duration: 30 Nov 19993 Dec 1999


Conference1999 Asia Pacific Microwave Conference (APMC'99) 'Microwaves Enter the 21st Century'
CitySingapore, Singapore


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