Monolayer-MoS2 Stacked Nanosheet Channel with C-type Metal Contact

Yun Yan Chung; Wei Sheng Yun; Bo Jhih Chou; Chen Feng Hsu; Shao Ming Yu; G. Arutchelvan; Ming Yang Li; Tsung En Lee; Bo Jiun Lin; Chen Yi Li; Aslan Wei; D. Mahaveer Sathaiya; Cheng Ting Chung; San Lin Liew; Vincent D.H. Hou; Wen Hao Chang; Bo Heng Liu; Chien Wei Chen; Chien Ying Su; Chi Chung Kei; Jin Cai; Chung Cheng Wu; Jeff Wu; Tung Ying Lee; Chao Hsin Chien; Chao Ching Cheng; Iuliana P. Radu

doi:10.1109/IEDM45741.2023.10413837

Monolayer-MoS₂ Stacked Nanosheet Channel with C-type Metal Contact

Yun Yan Chung^*, Wei Sheng Yun, Bo Jhih Chou, Chen Feng Hsu, Shao Ming Yu, G. Arutchelvan, Ming Yang Li, Tsung En Lee, Bo Jiun Lin, Chen Yi Li, Aslan Wei, D. Mahaveer Sathaiya, Cheng Ting Chung, San Lin Liew, Vincent D.H. Hou, Wen Hao Chang, Bo Heng Liu, Chien Wei Chen, Chien Ying Su, Chi Chung KeiJin Cai, Chung Cheng Wu, Jeff Wu, Tung Ying Lee, Chao Hsin Chien^*, Chao Ching Cheng^*, Iuliana P. Radu^*

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

4 Scopus citations

Abstract

This work demonstrates the first stacked nanosheet devices with monolayer MoS₂ channel after successful simultaneous release of 2 nanosheets. Two-stacked monolayer MoS₂ nanosheets with 50-nm width can be released free up to 150 nm, proving excellent mechanical properties of the channel material. Conformal gate stack deposition on the 2-stacked MoS₂ sheets is confirmed. To increase contact area, we introduce here 'C-type' wrap-around contact that contacts not only the edge but also the top and bottom side on the monolayer MoS₂ channels. For the first time, studies of gate stack and its impact on subthreshold swing, threshold voltage and hysteresis are presented on single nanosheet gate all around (GAA) devices. Unlike most reports in literature of depletion-mode monolayer MoS₂ devices, through appropriate process control and interface engineering we report here positive threshold voltage for NMOS devices.

Original language	English
Title of host publication	2023 International Electron Devices Meeting, IEDM 2023
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9798350327670
DOIs	https://doi.org/10.1109/IEDM45741.2023.10413837
State	Published - 2023
Event	2023 International Electron Devices Meeting, IEDM 2023 - San Francisco, United States Duration: 9 Dec 2023 → 13 Dec 2023

Publication series

Name	Technical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)	0163-1918

Conference

Conference	2023 International Electron Devices Meeting, IEDM 2023
Country/Territory	United States
City	San Francisco
Period	9/12/23 → 13/12/23

Access to Document

10.1109/IEDM45741.2023.10413837

Cite this

Chung, Y. Y., Yun, W. S., Chou, B. J., Hsu, C. F., Yu, S. M., Arutchelvan, G., Li, M. Y., Lee, T. E., Lin, B. J., Li, C. Y., Wei, A., Sathaiya, D. M., Chung, C. T., Liew, S. L., Hou, V. D. H., Chang, W. H., Liu, B. H., Chen, C. W., Su, C. Y., ... Radu, I. P. (2023). Monolayer-MoS₂ Stacked Nanosheet Channel with C-type Metal Contact. In 2023 International Electron Devices Meeting, IEDM 2023 (Technical Digest - International Electron Devices Meeting, IEDM). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IEDM45741.2023.10413837

@inproceedings{7a6529d81a0f408fa52121afd4f799fd,

title = "Monolayer-MoS2 Stacked Nanosheet Channel with C-type Metal Contact",

abstract = "This work demonstrates the first stacked nanosheet devices with monolayer MoS2 channel after successful simultaneous release of 2 nanosheets. Two-stacked monolayer MoS2 nanosheets with 50-nm width can be released free up to 150 nm, proving excellent mechanical properties of the channel material. Conformal gate stack deposition on the 2-stacked MoS2 sheets is confirmed. To increase contact area, we introduce here 'C-type' wrap-around contact that contacts not only the edge but also the top and bottom side on the monolayer MoS2 channels. For the first time, studies of gate stack and its impact on subthreshold swing, threshold voltage and hysteresis are presented on single nanosheet gate all around (GAA) devices. Unlike most reports in literature of depletion-mode monolayer MoS2 devices, through appropriate process control and interface engineering we report here positive threshold voltage for NMOS devices.",

author = "Chung, {Yun Yan} and Yun, {Wei Sheng} and Chou, {Bo Jhih} and Hsu, {Chen Feng} and Yu, {Shao Ming} and G. Arutchelvan and Li, {Ming Yang} and Lee, {Tsung En} and Lin, {Bo Jiun} and Li, {Chen Yi} and Aslan Wei and Sathaiya, {D. Mahaveer} and Chung, {Cheng Ting} and Liew, {San Lin} and Hou, {Vincent D.H.} and Chang, {Wen Hao} and Liu, {Bo Heng} and Chen, {Chien Wei} and Su, {Chien Ying} and Kei, {Chi Chung} and Jin Cai and Wu, {Chung Cheng} and Jeff Wu and Lee, {Tung Ying} and Chien, {Chao Hsin} and Cheng, {Chao Ching} and Radu, {Iuliana P.}",

note = "Publisher Copyright: {\textcopyright} 2023 IEEE.; 2023 International Electron Devices Meeting, IEDM 2023 ; Conference date: 09-12-2023 Through 13-12-2023",

year = "2023",

doi = "10.1109/IEDM45741.2023.10413837",

language = "English",

series = "Technical Digest - International Electron Devices Meeting, IEDM",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "2023 International Electron Devices Meeting, IEDM 2023",

address = "United States",

}

Chung, YY, Yun, WS, Chou, BJ, Hsu, CF, Yu, SM, Arutchelvan, G, Li, MY, Lee, TE, Lin, BJ, Li, CY, Wei, A, Sathaiya, DM, Chung, CT, Liew, SL, Hou, VDH, Chang, WH, Liu, BH, Chen, CW, Su, CY, Kei, CC, Cai, J, Wu, CC, Wu, J, Lee, TY, Chien, CH, Cheng, CC & Radu, IP 2023, Monolayer-MoS₂ Stacked Nanosheet Channel with C-type Metal Contact. in 2023 International Electron Devices Meeting, IEDM 2023. Technical Digest - International Electron Devices Meeting, IEDM, Institute of Electrical and Electronics Engineers Inc., 2023 International Electron Devices Meeting, IEDM 2023, San Francisco, United States, 9/12/23. https://doi.org/10.1109/IEDM45741.2023.10413837

Monolayer-MoS₂ Stacked Nanosheet Channel with C-type Metal Contact. / Chung, Yun Yan; Yun, Wei Sheng; Chou, Bo Jhih et al.
2023 International Electron Devices Meeting, IEDM 2023. Institute of Electrical and Electronics Engineers Inc., 2023. (Technical Digest - International Electron Devices Meeting, IEDM).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Monolayer-MoS2 Stacked Nanosheet Channel with C-type Metal Contact

AU - Chung, Yun Yan

AU - Yun, Wei Sheng

AU - Chou, Bo Jhih

AU - Hsu, Chen Feng

AU - Yu, Shao Ming

AU - Arutchelvan, G.

AU - Li, Ming Yang

AU - Lee, Tsung En

AU - Lin, Bo Jiun

AU - Li, Chen Yi

AU - Wei, Aslan

AU - Sathaiya, D. Mahaveer

AU - Chung, Cheng Ting

AU - Liew, San Lin

AU - Hou, Vincent D.H.

AU - Chang, Wen Hao

AU - Liu, Bo Heng

AU - Chen, Chien Wei

AU - Su, Chien Ying

AU - Kei, Chi Chung

AU - Cai, Jin

AU - Wu, Chung Cheng

AU - Wu, Jeff

AU - Lee, Tung Ying

AU - Chien, Chao Hsin

AU - Cheng, Chao Ching

AU - Radu, Iuliana P.

PY - 2023

Y1 - 2023

N2 - This work demonstrates the first stacked nanosheet devices with monolayer MoS2 channel after successful simultaneous release of 2 nanosheets. Two-stacked monolayer MoS2 nanosheets with 50-nm width can be released free up to 150 nm, proving excellent mechanical properties of the channel material. Conformal gate stack deposition on the 2-stacked MoS2 sheets is confirmed. To increase contact area, we introduce here 'C-type' wrap-around contact that contacts not only the edge but also the top and bottom side on the monolayer MoS2 channels. For the first time, studies of gate stack and its impact on subthreshold swing, threshold voltage and hysteresis are presented on single nanosheet gate all around (GAA) devices. Unlike most reports in literature of depletion-mode monolayer MoS2 devices, through appropriate process control and interface engineering we report here positive threshold voltage for NMOS devices.

AB - This work demonstrates the first stacked nanosheet devices with monolayer MoS2 channel after successful simultaneous release of 2 nanosheets. Two-stacked monolayer MoS2 nanosheets with 50-nm width can be released free up to 150 nm, proving excellent mechanical properties of the channel material. Conformal gate stack deposition on the 2-stacked MoS2 sheets is confirmed. To increase contact area, we introduce here 'C-type' wrap-around contact that contacts not only the edge but also the top and bottom side on the monolayer MoS2 channels. For the first time, studies of gate stack and its impact on subthreshold swing, threshold voltage and hysteresis are presented on single nanosheet gate all around (GAA) devices. Unlike most reports in literature of depletion-mode monolayer MoS2 devices, through appropriate process control and interface engineering we report here positive threshold voltage for NMOS devices.

UR - http://www.scopus.com/inward/record.url?scp=85185605157&partnerID=8YFLogxK

U2 - 10.1109/IEDM45741.2023.10413837

DO - 10.1109/IEDM45741.2023.10413837

M3 - Conference contribution

AN - SCOPUS:85185605157

T3 - Technical Digest - International Electron Devices Meeting, IEDM

BT - 2023 International Electron Devices Meeting, IEDM 2023

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2023 International Electron Devices Meeting, IEDM 2023

Y2 - 9 December 2023 through 13 December 2023

ER -