Abstract
By creating a large-scale and highly oriented monolayer-MoS2/multilayer-MoSe2 heterostructure with an atomically clean interface, we use angle-resolved photoemission spectroscopy (ARPES) to probe the electronic structure of the created heterostructure and its respective constituents. This comparative study allows us to determine the band offset at the K-point and to reveal k-resolved interlayer hybridization in the Brillouin zone. We further discuss the effect of moiré potential on the state at the K-valley for MoS2. We expect that our approach of creating heterostructures and the k-resolved study of the electronic band structure will elucidate how interlayer coupling manifests in determining the electronic structure formation of transition metal dichalcogenide (TMD) vertical heterostructures.
Original language | English |
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Pages (from-to) | 16591-16597 |
Number of pages | 7 |
Journal | Journal of Physical Chemistry C |
Volume | 125 |
Issue number | 30 |
DOIs | |
State | Published - 5 Aug 2021 |